Controlled assembly and dispersion of strain-induced InGaAs/GaAs nanotubes

Ik Su Chun; Xiuling Li

doi:10.1109/TNANO.2008.926372

Controlled assembly and dispersion of strain-induced InGaAs/GaAs nanotubes

Research output: Contribution to journal › Article › peer-review

Abstract

Group III-V semiconductor nanotubes (SNTs) are formed when strained planar bilayers are released from the substrate. Compared to other nanotechnology building blocks, one of the main advantages of SNTs is the capability of precise positioning due to the top-down fabrication approach. In this letter, we demonstrate large-area assembly of ordered arrays of In_xGa _1-x As/GaAs nanotubes and the dispersion of their freestanding form into solution and onto foreign substrates. In addition, we systematically investigate the crystal orientation dependence of rolling behavior using a wheel configuration, which serves as a guide for assembly homogeneity. Theoretical and experimental evaluations of tube diameters are also discussed.

Original language	English (US)
Pages (from-to)	493-495
Number of pages	3
Journal	IEEE Transactions on Nanotechnology
Volume	7
Issue number	4
DOIs	https://doi.org/10.1109/TNANO.2008.926372
State	Published - Jul 2008

Keywords

Gallium compounds
Indium compounds
Nanotechnology
Semiconductor materials

ASJC Scopus subject areas

Engineering(all)
Hardware and Architecture

Online availability

10.1109/TNANO.2008.926372

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AB - Group III-V semiconductor nanotubes (SNTs) are formed when strained planar bilayers are released from the substrate. Compared to other nanotechnology building blocks, one of the main advantages of SNTs is the capability of precise positioning due to the top-down fabrication approach. In this letter, we demonstrate large-area assembly of ordered arrays of InxGa 1-x As/GaAs nanotubes and the dispersion of their freestanding form into solution and onto foreign substrates. In addition, we systematically investigate the crystal orientation dependence of rolling behavior using a wheel configuration, which serves as a guide for assembly homogeneity. Theoretical and experimental evaluations of tube diameters are also discussed.

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Controlled assembly and dispersion of strain-induced InGaAs/GaAs nanotubes

Abstract

Keywords

ASJC Scopus subject areas

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