Controlled assembly and dispersion of strain-induced InGaAs/GaAs nanotubes

Ik Su Chun, Xiuling Li

Research output: Contribution to journalArticle

Abstract

Group III-V semiconductor nanotubes (SNTs) are formed when strained planar bilayers are released from the substrate. Compared to other nanotechnology building blocks, one of the main advantages of SNTs is the capability of precise positioning due to the top-down fabrication approach. In this letter, we demonstrate large-area assembly of ordered arrays of InxGa 1-x As/GaAs nanotubes and the dispersion of their freestanding form into solution and onto foreign substrates. In addition, we systematically investigate the crystal orientation dependence of rolling behavior using a wheel configuration, which serves as a guide for assembly homogeneity. Theoretical and experimental evaluations of tube diameters are also discussed.

Original languageEnglish (US)
Pages (from-to)493-495
Number of pages3
JournalIEEE Transactions on Nanotechnology
Volume7
Issue number4
DOIs
StatePublished - Jul 1 2008

Keywords

  • Gallium compounds
  • Indium compounds
  • Nanotechnology
  • Semiconductor materials

ASJC Scopus subject areas

  • Engineering(all)
  • Hardware and Architecture

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