Control of medium range order in amorphous silicon via ion and neutral bombardment

Keyphrases

• Medium-range Order 100%
• Amorphous Silicon 100%
• Bombardment 100%
• Silicon via 100%
• Annealing 50%
• Fluctuation Electron Microscopy 50%
• Ar Ions 50%
• Low Energy 50%
• Film Deposition 50%
• High Energy 50%
• High Density 50%
• Structural Order 50%
• Raman Scattering 50%
• Growth Process 50%
• Spectroscopic Ellipsometry 50%
• Energy State 50%
• Magnetron Sputtering 50%
• Ion Energy 50%
• Substrate Temperature 50%
• Non-equilibrium Growth 50%
• Ordered Region 50%
• Surface Restructuring 50%
• Particle Bombardment 50%
• Surface Mobility 50%
• Timing Control 50%
• Fluctuation Microscopy 50%
• Size-density 50%

Material Science

• Density 100%
• Medium-Range Order 100%
• Amorphous Silicon 100%
• Mechanical Strength 50%
• Crystalline Material 50%
• Annealing 50%
• Electron Microscopy 50%
• Film Deposition 50%
• Surface Restructuring 50%

Engineering

• Bombardment 100%
• Range Order 100%
• Subsurface 66%
• Energetics 33%
• Structural Order 33%
• Nonequilibrium 33%
• Growth Process 33%
• Magnetron 33%
• Energy State 33%
• Ion Energy 33%
• Substrate Temperature 33%
• Sized Region 33%