Control of defect concentrations within a semiconductor through adsorption

Edmund G. Seebauer, Kapil Dev, Michael Y.L. Jung, Ramakrishnan Vaidyanathan, Charlotte T.M. Kwok, Joel W. Ager, Eugene E. Haller, Richard D. Braatz

Research output: Contribution to journalArticle

Abstract

The technologically useful properties of a crystalline solid depend upon the concentration of defects it contains. Here we show that defect concentrations as deep as 0.5μm within a semiconductor can be profoundly influenced by gas adsorption. Self-diffusion rates within silicon show that nitrogen atoms adsorbed at less than 1% of a monolayer lead to defect concentrations that vary controllably over several orders of magnitude. The results show that previous measurements of diffusion and defect thermodynamics in semiconductors may have suffered from neglect of adsorption effects.

Original languageEnglish (US)
Article number055503
JournalPhysical review letters
Volume97
Issue number5
DOIs
StatePublished - Aug 14 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Control of defect concentrations within a semiconductor through adsorption'. Together they form a unique fingerprint.

  • Cite this

    Seebauer, E. G., Dev, K., Jung, M. Y. L., Vaidyanathan, R., Kwok, C. T. M., Ager, J. W., Haller, E. E., & Braatz, R. D. (2006). Control of defect concentrations within a semiconductor through adsorption. Physical review letters, 97(5), [055503]. https://doi.org/10.1103/PhysRevLett.97.055503