Control and quantification of residual stresses in anodically bonded MEMS structures

R. Inzinga, T. Lin, M. Yadav, H. T. Johnson, G. P. Horn

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Residual stresses in anodically bonded silicon devices can result in quality control and process control deficits if the stresses are not controlled. At the same time several geometries may benefit from a controlled introduction of residual stresses. For example, long, thin structures may utilize a residual tensile stress to minimize the likelihood of buckling, while etched cavities with sharp corners can benefit from a residual compressive stress to suppress crack initiation and growth. In the present work, we quantify the residual stress fields present in silicon wafers that are anodically bonded to virgin Pyrex wafers. Anodic bonding is conducted using standard procedures as well as a proposed alternative method that utilizes differential thermal bonding to control the residual stress state. The experimental stress state is compared to theoretical finite element calculations to determine the capability of controlling stresses based on a simple thermal model.

Original languageEnglish (US)
Title of host publicationMEMS and Nanotechnology - Proceedings of the 2010 Annual Conference on Experimental and Applied Mechanics
Number of pages5
ISBN (Print)9781441988249
StatePublished - 2011

Publication series

NameConference Proceedings of the Society for Experimental Mechanics Series
ISSN (Print)2191-5644
ISSN (Electronic)2191-5652

ASJC Scopus subject areas

  • Mechanical Engineering
  • General Engineering
  • Computational Mechanics


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