Abstract
Residual stresses in anodically bonded silicon devices can result in quality control and process control deficits if the stresses are not controlled. At the same time several geometries may benefit from a controlled introduction of residual stresses. For example, long, thin structures may utilize a residual tensile stress to minimize the likelihood of buckling, while etched cavities with sharp comers can benefit from a residual compressive stress to suppress crack initiation and growth. In the present work, we quantify the residual stress fields present in silicon wafers that are anodically bonded to virgin Pyrex wafers. Anodic bonding is conducted using standard procedures as well as a proposed alternative method that utilizes differential thermal bonding to control the residual stress state. The experimental stress state is compared to theoretical finite element calculations to determine the capability of controlling stresses based on a simple thermal model.
| Original language | English (US) |
|---|---|
| Title of host publication | Society for Experimental Mechanics - SEM Annual Conference and Exposition on Experimental and Applied Mechanics 2010 |
| Pages | 2366-2370 |
| Number of pages | 5 |
| State | Published - Nov 9 2010 |
| Event | SEM Annual Conference and Exposition on Experimental and Applied Mechanics 2010 - Indianapolis, IN, United States Duration: Jun 7 2010 → Jun 10 2010 |
Publication series
| Name | Society for Experimental Mechanics - SEM Annual Conference and Exposition on Experimental and Applied Mechanics 2010 |
|---|---|
| Volume | 3 |
Other
| Other | SEM Annual Conference and Exposition on Experimental and Applied Mechanics 2010 |
|---|---|
| Country | United States |
| City | Indianapolis, IN |
| Period | 6/7/10 → 6/10/10 |
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ASJC Scopus subject areas
- Mechanics of Materials
Cite this
Control and quantification of residual stresses in anodically bonded MEMS structures. / Inzinga, R.; Lin, T.; Yadav, M.; Johnson, H. T.; Horn, G. P.
Society for Experimental Mechanics - SEM Annual Conference and Exposition on Experimental and Applied Mechanics 2010. 2010. p. 2366-2370 (Society for Experimental Mechanics - SEM Annual Conference and Exposition on Experimental and Applied Mechanics 2010; Vol. 3).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Control and quantification of residual stresses in anodically bonded MEMS structures
AU - Inzinga, R.
AU - Lin, T.
AU - Yadav, M.
AU - Johnson, H. T.
AU - Horn, G. P.
PY - 2010/11/9
Y1 - 2010/11/9
N2 - Residual stresses in anodically bonded silicon devices can result in quality control and process control deficits if the stresses are not controlled. At the same time several geometries may benefit from a controlled introduction of residual stresses. For example, long, thin structures may utilize a residual tensile stress to minimize the likelihood of buckling, while etched cavities with sharp comers can benefit from a residual compressive stress to suppress crack initiation and growth. In the present work, we quantify the residual stress fields present in silicon wafers that are anodically bonded to virgin Pyrex wafers. Anodic bonding is conducted using standard procedures as well as a proposed alternative method that utilizes differential thermal bonding to control the residual stress state. The experimental stress state is compared to theoretical finite element calculations to determine the capability of controlling stresses based on a simple thermal model.
AB - Residual stresses in anodically bonded silicon devices can result in quality control and process control deficits if the stresses are not controlled. At the same time several geometries may benefit from a controlled introduction of residual stresses. For example, long, thin structures may utilize a residual tensile stress to minimize the likelihood of buckling, while etched cavities with sharp comers can benefit from a residual compressive stress to suppress crack initiation and growth. In the present work, we quantify the residual stress fields present in silicon wafers that are anodically bonded to virgin Pyrex wafers. Anodic bonding is conducted using standard procedures as well as a proposed alternative method that utilizes differential thermal bonding to control the residual stress state. The experimental stress state is compared to theoretical finite element calculations to determine the capability of controlling stresses based on a simple thermal model.
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UR - http://www.scopus.com/inward/citedby.url?scp=78049433976&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:78049433976
SN - 9781617386909
T3 - Society for Experimental Mechanics - SEM Annual Conference and Exposition on Experimental and Applied Mechanics 2010
SP - 2366
EP - 2370
BT - Society for Experimental Mechanics - SEM Annual Conference and Exposition on Experimental and Applied Mechanics 2010
ER -