Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy

K. A. Bratland, T. Spila, D. G. Cahill, J. E. Greene, P. Desjardins

Research output: Contribution to journalArticle

Abstract

Numerical simulations based on a discrete model describing step edge motion are used to compute the surface morphological evolution of Ge(001) layers deposited by low-temperature (Ts 45-230 C) molecular beam epitaxy and to probe the relationship between surface roughening and the onset of epitaxial breakdown-the abrupt growth mode transition from epitaxial to amorphous-at temperature-dependent critical film thicknesses h1(Ts). Computed surface widths w and in-plane coherence lengths d as a function of layer thickness h exhibit good agreement with experimental values. Inspired by experimental results indicating that epitaxial breakdown is initiated at facetted interisland trenches as the surface roughness reaches a T s-independent overall aspect ratio, we show that simulated data for w/d 0.03 correspond to thicknesses h1 exp (-E1/kT s) with E1 0.63 eV, a value equal to the Ge adatom diffusion activation energy on Ge(001). Simulated h1 values agree well with experimental data. Above a critical growth temperature of 170 C, computed w/d values saturate at large film thicknesses, never reaching the critical aspect ratio w/d 0.03. Thus, the model also predicts that epitaxial breakdown does not occur for Ts 170 C as observed experimentally.

Original languageEnglish (US)
Article number063513
JournalJournal of Applied Physics
Volume109
Issue number6
DOIs
StatePublished - Mar 15 2011

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molecular beam epitaxy
breakdown
continuums
aspect ratio
film thickness
adatoms
surface roughness
activation energy
temperature
probes
simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy. / Bratland, K. A.; Spila, T.; Cahill, D. G.; Greene, J. E.; Desjardins, P.

In: Journal of Applied Physics, Vol. 109, No. 6, 063513, 15.03.2011.

Research output: Contribution to journalArticle

@article{283bd5a9cc234904b381a9bf9f20bba0,
title = "Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy",
abstract = "Numerical simulations based on a discrete model describing step edge motion are used to compute the surface morphological evolution of Ge(001) layers deposited by low-temperature (Ts 45-230 C) molecular beam epitaxy and to probe the relationship between surface roughening and the onset of epitaxial breakdown-the abrupt growth mode transition from epitaxial to amorphous-at temperature-dependent critical film thicknesses h1(Ts). Computed surface widths w and in-plane coherence lengths d as a function of layer thickness h exhibit good agreement with experimental values. Inspired by experimental results indicating that epitaxial breakdown is initiated at facetted interisland trenches as the surface roughness reaches a T s-independent overall aspect ratio, we show that simulated data for w/d 0.03 correspond to thicknesses h1 exp (-E1/kT s) with E1 0.63 eV, a value equal to the Ge adatom diffusion activation energy on Ge(001). Simulated h1 values agree well with experimental data. Above a critical growth temperature of 170 C, computed w/d values saturate at large film thicknesses, never reaching the critical aspect ratio w/d 0.03. Thus, the model also predicts that epitaxial breakdown does not occur for Ts 170 C as observed experimentally.",
author = "Bratland, {K. A.} and T. Spila and Cahill, {D. G.} and Greene, {J. E.} and P. Desjardins",
year = "2011",
month = "3",
day = "15",
doi = "10.1063/1.3556745",
language = "English (US)",
volume = "109",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy

AU - Bratland, K. A.

AU - Spila, T.

AU - Cahill, D. G.

AU - Greene, J. E.

AU - Desjardins, P.

PY - 2011/3/15

Y1 - 2011/3/15

N2 - Numerical simulations based on a discrete model describing step edge motion are used to compute the surface morphological evolution of Ge(001) layers deposited by low-temperature (Ts 45-230 C) molecular beam epitaxy and to probe the relationship between surface roughening and the onset of epitaxial breakdown-the abrupt growth mode transition from epitaxial to amorphous-at temperature-dependent critical film thicknesses h1(Ts). Computed surface widths w and in-plane coherence lengths d as a function of layer thickness h exhibit good agreement with experimental values. Inspired by experimental results indicating that epitaxial breakdown is initiated at facetted interisland trenches as the surface roughness reaches a T s-independent overall aspect ratio, we show that simulated data for w/d 0.03 correspond to thicknesses h1 exp (-E1/kT s) with E1 0.63 eV, a value equal to the Ge adatom diffusion activation energy on Ge(001). Simulated h1 values agree well with experimental data. Above a critical growth temperature of 170 C, computed w/d values saturate at large film thicknesses, never reaching the critical aspect ratio w/d 0.03. Thus, the model also predicts that epitaxial breakdown does not occur for Ts 170 C as observed experimentally.

AB - Numerical simulations based on a discrete model describing step edge motion are used to compute the surface morphological evolution of Ge(001) layers deposited by low-temperature (Ts 45-230 C) molecular beam epitaxy and to probe the relationship between surface roughening and the onset of epitaxial breakdown-the abrupt growth mode transition from epitaxial to amorphous-at temperature-dependent critical film thicknesses h1(Ts). Computed surface widths w and in-plane coherence lengths d as a function of layer thickness h exhibit good agreement with experimental values. Inspired by experimental results indicating that epitaxial breakdown is initiated at facetted interisland trenches as the surface roughness reaches a T s-independent overall aspect ratio, we show that simulated data for w/d 0.03 correspond to thicknesses h1 exp (-E1/kT s) with E1 0.63 eV, a value equal to the Ge adatom diffusion activation energy on Ge(001). Simulated h1 values agree well with experimental data. Above a critical growth temperature of 170 C, computed w/d values saturate at large film thicknesses, never reaching the critical aspect ratio w/d 0.03. Thus, the model also predicts that epitaxial breakdown does not occur for Ts 170 C as observed experimentally.

UR - http://www.scopus.com/inward/record.url?scp=79953671470&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953671470&partnerID=8YFLogxK

U2 - 10.1063/1.3556745

DO - 10.1063/1.3556745

M3 - Article

AN - SCOPUS:79953671470

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 6

M1 - 063513

ER -