Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 μm

D. Gollub; M. Kamp; A. Forchel; J. Seufert; S. R. Bank; M. A. Wistey; H. B. Yuen; L. L. Goddard; J. S. Harris

doi:10.1049/el:20046601

Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 μm

D. Gollub
, M. Kamp
, A. Forchel
, J. Seufert
, S. R. Bank
, M. A. Wistey
, H. B. Yuen
, L. L. Goddard
, J. S. Harris

Research output: Contribution to journal › Article › peer-review

Abstract

GaAs-based singlemode emission at 1.5 μm has been realised for the first time in continuous-wave operation. GaInNAsSb active-layer material and GaAsN strain-compensating barriers have been used in combination with lateral distributed feedback. Laser diodes with a threshold current of 95 mA, an external efficiency of 0.15 W/A and a maximum output power of more than 10 mW could be demonstrated. A sidemode suppression ratio better than 31 dB could be realised at a singlemode emission wavelength of 1496 nm.

Original language	English (US)
Pages (from-to)	1487-1488
Number of pages	2
Journal	Electronics Letters
Volume	40
Issue number	23
DOIs	https://doi.org/10.1049/el:20046601
State	Published - Nov 11 2004
Externally published	Yes

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Electrical and Electronic Engineering

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10.1049/el:20046601

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title = "Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 μm",

abstract = "GaAs-based singlemode emission at 1.5 μm has been realised for the first time in continuous-wave operation. GaInNAsSb active-layer material and GaAsN strain-compensating barriers have been used in combination with lateral distributed feedback. Laser diodes with a threshold current of 95 mA, an external efficiency of 0.15 W/A and a maximum output power of more than 10 mW could be demonstrated. A sidemode suppression ratio better than 31 dB could be realised at a singlemode emission wavelength of 1496 nm.",

author = "D. Gollub and M. Kamp and A. Forchel and J. Seufert and Bank, \{S. R.\} and Wistey, \{M. A.\} and Yuen, \{H. B.\} and Goddard, \{L. L.\} and Harris, \{J. S.\}",

year = "2004",

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day = "11",

doi = "10.1049/el:20046601",

language = "English (US)",

volume = "40",

pages = "1487--1488",

journal = "Electronics Letters",

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T1 - Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 μm

AU - Gollub, D.

AU - Kamp, M.

AU - Forchel, A.

AU - Seufert, J.

AU - Bank, S. R.

AU - Wistey, M. A.

AU - Yuen, H. B.

AU - Goddard, L. L.

AU - Harris, J. S.

PY - 2004/11/11

Y1 - 2004/11/11

N2 - GaAs-based singlemode emission at 1.5 μm has been realised for the first time in continuous-wave operation. GaInNAsSb active-layer material and GaAsN strain-compensating barriers have been used in combination with lateral distributed feedback. Laser diodes with a threshold current of 95 mA, an external efficiency of 0.15 W/A and a maximum output power of more than 10 mW could be demonstrated. A sidemode suppression ratio better than 31 dB could be realised at a singlemode emission wavelength of 1496 nm.

AB - GaAs-based singlemode emission at 1.5 μm has been realised for the first time in continuous-wave operation. GaInNAsSb active-layer material and GaAsN strain-compensating barriers have been used in combination with lateral distributed feedback. Laser diodes with a threshold current of 95 mA, an external efficiency of 0.15 W/A and a maximum output power of more than 10 mW could be demonstrated. A sidemode suppression ratio better than 31 dB could be realised at a singlemode emission wavelength of 1496 nm.

UR - https://www.scopus.com/pages/publications/9144256266

UR - https://www.scopus.com/pages/publications/9144256266#tab=citedBy

U2 - 10.1049/el:20046601

DO - 10.1049/el:20046601

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AN - SCOPUS:9144256266

SN - 0013-5194

VL - 40

SP - 1487

EP - 1488

JO - Electronics Letters

JF - Electronics Letters

IS - 23

ER -

Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 μm

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