Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 μm

D. Gollub, M. Kamp, A. Forchel, J. Seufert, S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, J. S. Harris

Research output: Contribution to journalArticlepeer-review


GaAs-based singlemode emission at 1.5 μm has been realised for the first time in continuous-wave operation. GaInNAsSb active-layer material and GaAsN strain-compensating barriers have been used in combination with lateral distributed feedback. Laser diodes with a threshold current of 95 mA, an external efficiency of 0.15 W/A and a maximum output power of more than 10 mW could be demonstrated. A sidemode suppression ratio better than 31 dB could be realised at a singlemode emission wavelength of 1496 nm.

Original languageEnglish (US)
Pages (from-to)1487-1488
Number of pages2
JournalElectronics Letters
Issue number23
StatePublished - Nov 11 2004
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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