Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 μm

D. Gollub; M. Kamp; A. Forchel; J. Seufert; S. R. Bank; M. A. Wistey; H. B. Yuen; L. L. Goddard; J. S. Harris

doi:10.1049/el:20046601

Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 μm

D. Gollub, M. Kamp, A. Forchel, J. Seufert, S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, J. S. Harris

Research output: Contribution to journal › Article › peer-review

Abstract

GaAs-based singlemode emission at 1.5 μm has been realised for the first time in continuous-wave operation. GaInNAsSb active-layer material and GaAsN strain-compensating barriers have been used in combination with lateral distributed feedback. Laser diodes with a threshold current of 95 mA, an external efficiency of 0.15 W/A and a maximum output power of more than 10 mW could be demonstrated. A sidemode suppression ratio better than 31 dB could be realised at a singlemode emission wavelength of 1496 nm.

Original language	English (US)
Pages (from-to)	1487-1488
Number of pages	2
Journal	Electronics Letters
Volume	40
Issue number	23
DOIs	https://doi.org/10.1049/el:20046601
State	Published - Nov 11 2004
Externally published	Yes

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Electrical and Electronic Engineering

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10.1049/el:20046601

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title = "Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 μm",

abstract = "GaAs-based singlemode emission at 1.5 μm has been realised for the first time in continuous-wave operation. GaInNAsSb active-layer material and GaAsN strain-compensating barriers have been used in combination with lateral distributed feedback. Laser diodes with a threshold current of 95 mA, an external efficiency of 0.15 W/A and a maximum output power of more than 10 mW could be demonstrated. A sidemode suppression ratio better than 31 dB could be realised at a singlemode emission wavelength of 1496 nm.",

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doi = "10.1049/el:20046601",

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T1 - Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 μm

AU - Gollub, D.

AU - Kamp, M.

AU - Forchel, A.

AU - Seufert, J.

AU - Bank, S. R.

AU - Wistey, M. A.

AU - Yuen, H. B.

AU - Goddard, L. L.

AU - Harris, J. S.

PY - 2004/11/11

Y1 - 2004/11/11

N2 - GaAs-based singlemode emission at 1.5 μm has been realised for the first time in continuous-wave operation. GaInNAsSb active-layer material and GaAsN strain-compensating barriers have been used in combination with lateral distributed feedback. Laser diodes with a threshold current of 95 mA, an external efficiency of 0.15 W/A and a maximum output power of more than 10 mW could be demonstrated. A sidemode suppression ratio better than 31 dB could be realised at a singlemode emission wavelength of 1496 nm.

AB - GaAs-based singlemode emission at 1.5 μm has been realised for the first time in continuous-wave operation. GaInNAsSb active-layer material and GaAsN strain-compensating barriers have been used in combination with lateral distributed feedback. Laser diodes with a threshold current of 95 mA, an external efficiency of 0.15 W/A and a maximum output power of more than 10 mW could be demonstrated. A sidemode suppression ratio better than 31 dB could be realised at a singlemode emission wavelength of 1496 nm.

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DO - 10.1049/el:20046601

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JO - Electronics Letters

JF - Electronics Letters

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ER -

Continuous-wave operation of GaInNAsSb distributed feedback lasers at 1.5 μm

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