Continuous wave operation of 640-660 nm selectively oxidised AlGaInP vertical-cavity lasers

K. D. Choquette; R. P. Schneider

doi:10.1049/el:19950814

Continuous wave operation of 640-660 nm selectively oxidised AlGaInP vertical-cavity lasers

Research output: Contribution to journal › Article › peer-review

Abstract

The performance of AlGaInP visible vertical-cavity laser diodes fabricated using selective oxidation is reported. At room temperature, the lasers exhibit continuous wave operation from 678 to 642 nm, with 642 nm being the shortest wavelength attained to date. In addition, these lasers possess the lowest threshold currents (660µA) and voltages (150mV above photon energy) reported for visible vertical-cavity lasers.

Original language	English (US)
Pages (from-to)	1145-1146
Number of pages	2
Journal	Electronics Letters
Volume	31
Issue number	14
DOIs	https://doi.org/10.1049/el:19950814
State	Published - Jul 6 1995
Externally published	Yes

Keywords

Lasers
Vertical cavity surface emitting lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1049/el:19950814

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@article{f5fb6b5739f443c5a03fa5945bf16952,

title = "Continuous wave operation of 640-660 nm selectively oxidised AlGaInP vertical-cavity lasers",

abstract = "The performance of AlGaInP visible vertical-cavity laser diodes fabricated using selective oxidation is reported. At room temperature, the lasers exhibit continuous wave operation from 678 to 642 nm, with 642 nm being the shortest wavelength attained to date. In addition, these lasers possess the lowest threshold currents (660µA) and voltages (150mV above photon energy) reported for visible vertical-cavity lasers.",

keywords = "Lasers, Vertical cavity surface emitting lasers",

author = "Choquette, {K. D.} and Schneider, {R. P.}",

year = "1995",

month = jul,

day = "6",

doi = "10.1049/el:19950814",

language = "English (US)",

volume = "31",

pages = "1145--1146",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "14",

}

TY - JOUR

T1 - Continuous wave operation of 640-660 nm selectively oxidised AlGaInP vertical-cavity lasers

AU - Choquette, K. D.

AU - Schneider, R. P.

PY - 1995/7/6

Y1 - 1995/7/6

N2 - The performance of AlGaInP visible vertical-cavity laser diodes fabricated using selective oxidation is reported. At room temperature, the lasers exhibit continuous wave operation from 678 to 642 nm, with 642 nm being the shortest wavelength attained to date. In addition, these lasers possess the lowest threshold currents (660µA) and voltages (150mV above photon energy) reported for visible vertical-cavity lasers.

AB - The performance of AlGaInP visible vertical-cavity laser diodes fabricated using selective oxidation is reported. At room temperature, the lasers exhibit continuous wave operation from 678 to 642 nm, with 642 nm being the shortest wavelength attained to date. In addition, these lasers possess the lowest threshold currents (660µA) and voltages (150mV above photon energy) reported for visible vertical-cavity lasers.

KW - Lasers

KW - Vertical cavity surface emitting lasers

UR - http://www.scopus.com/inward/record.url?scp=0029637838&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029637838&partnerID=8YFLogxK

U2 - 10.1049/el:19950814

DO - 10.1049/el:19950814

M3 - Article

AN - SCOPUS:0029637838

SN - 0013-5194

VL - 31

SP - 1145

EP - 1146

JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -

Continuous wave operation of 640-660 nm selectively oxidised AlGaInP vertical-cavity lasers

Abstract

Keywords

ASJC Scopus subject areas

Online availability

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