Continuous wave operation of 1.3 μm vertical cavity InGaAsN quantum well lasers

A. J. Fischer, J. F. Klem, K. D. Choquette, O. Blum, A. A. Allerman, I. J. Fritz, S. R. Kurtz, W. G. Breiland, R. Sieg, K. M. Geib, J. W. Scott, R. L. Naone

Research output: Contribution to journalConference articlepeer-review

Abstract

The continuous wave operation of 1.3 μm vertical cavity surface emitting laser (VCSEL) grown on GaAs substrates is achieved up to 55 °C, as motivated by demands of emerging VCSEL network applications. These VCSELs employ the mature AlGaAs/GaAs distributed Bragg reflector mirror technology, including selective oxidation for efficient cavity designs. By incorporating a tunnel junction near the optical cavity, both mirrors are doped n-type, which provides the benefits of low optical loss.

Original languageEnglish (US)
Pages (from-to)7-8
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
StatePublished - Dec 1 2000
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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