The continuous wave operation of 1.3 μm vertical cavity surface emitting laser (VCSEL) grown on GaAs substrates is achieved up to 55 °C, as motivated by demands of emerging VCSEL network applications. These VCSELs employ the mature AlGaAs/GaAs distributed Bragg reflector mirror technology, including selective oxidation for efficient cavity designs. By incorporating a tunnel junction near the optical cavity, both mirrors are doped n-type, which provides the benefits of low optical loss.
|Original language||English (US)|
|Number of pages||2|
|Journal||Conference Digest - IEEE International Semiconductor Laser Conference|
|State||Published - Dec 1 2000|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering