Continuous wave operation of 1.3 μm vertical cavity InGaAsN quantum well lasers

A. J. Fischer; J. F. Klem; K. D. Choquette; O. Blum; A. A. Allerman; I. J. Fritz; S. R. Kurtz; W. G. Breiland; R. Sieg; K. M. Geib; J. W. Scott; R. L. Naone

Continuous wave operation of 1.3 μm vertical cavity InGaAsN quantum well lasers

A. J. Fischer, J. F. Klem, K. D. Choquette, O. Blum, A. A. Allerman, I. J. Fritz, S. R. Kurtz, W. G. Breiland, R. Sieg, K. M. Geib, J. W. Scott, R. L. Naone

Research output: Contribution to journal › Conference article › peer-review

Abstract

The continuous wave operation of 1.3 μm vertical cavity surface emitting laser (VCSEL) grown on GaAs substrates is achieved up to 55 °C, as motivated by demands of emerging VCSEL network applications. These VCSELs employ the mature AlGaAs/GaAs distributed Bragg reflector mirror technology, including selective oxidation for efficient cavity designs. By incorporating a tunnel junction near the optical cavity, both mirrors are doped n-type, which provides the benefits of low optical loss.

Original language	English (US)
Pages (from-to)	7-8
Number of pages	2
Journal	Conference Digest - IEEE International Semiconductor Laser Conference
State	Published - 2000
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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title = "Continuous wave operation of 1.3 μm vertical cavity InGaAsN quantum well lasers",

abstract = "The continuous wave operation of 1.3 μm vertical cavity surface emitting laser (VCSEL) grown on GaAs substrates is achieved up to 55 °C, as motivated by demands of emerging VCSEL network applications. These VCSELs employ the mature AlGaAs/GaAs distributed Bragg reflector mirror technology, including selective oxidation for efficient cavity designs. By incorporating a tunnel junction near the optical cavity, both mirrors are doped n-type, which provides the benefits of low optical loss.",

author = "Fischer, {A. J.} and Klem, {J. F.} and Choquette, {K. D.} and O. Blum and Allerman, {A. A.} and Fritz, {I. J.} and Kurtz, {S. R.} and Breiland, {W. G.} and R. Sieg and Geib, {K. M.} and Scott, {J. W.} and Naone, {R. L.}",

year = "2000",

language = "English (US)",

pages = "7--8",

journal = "Conference Digest - IEEE International Semiconductor Laser Conference",

issn = "0899-9406",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Continuous wave operation of 1.3 μm vertical cavity InGaAsN quantum well lasers

AU - Fischer, A. J.

AU - Klem, J. F.

AU - Choquette, K. D.

AU - Blum, O.

AU - Allerman, A. A.

AU - Fritz, I. J.

AU - Kurtz, S. R.

AU - Breiland, W. G.

AU - Sieg, R.

AU - Geib, K. M.

AU - Scott, J. W.

AU - Naone, R. L.

PY - 2000

Y1 - 2000

N2 - The continuous wave operation of 1.3 μm vertical cavity surface emitting laser (VCSEL) grown on GaAs substrates is achieved up to 55 °C, as motivated by demands of emerging VCSEL network applications. These VCSELs employ the mature AlGaAs/GaAs distributed Bragg reflector mirror technology, including selective oxidation for efficient cavity designs. By incorporating a tunnel junction near the optical cavity, both mirrors are doped n-type, which provides the benefits of low optical loss.

AB - The continuous wave operation of 1.3 μm vertical cavity surface emitting laser (VCSEL) grown on GaAs substrates is achieved up to 55 °C, as motivated by demands of emerging VCSEL network applications. These VCSELs employ the mature AlGaAs/GaAs distributed Bragg reflector mirror technology, including selective oxidation for efficient cavity designs. By incorporating a tunnel junction near the optical cavity, both mirrors are doped n-type, which provides the benefits of low optical loss.

UR - http://www.scopus.com/inward/record.url?scp=0034473980&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034473980&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034473980

SN - 0899-9406

SP - 7

EP - 8

JO - Conference Digest - IEEE International Semiconductor Laser Conference

JF - Conference Digest - IEEE International Semiconductor Laser Conference

ER -

Continuous wave operation of 1.3 μm vertical cavity InGaAsN quantum well lasers

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