Contamination concerns at the intermediate focus of an extreme ultraviolet light source

David N Ruzic, John Sporre, Dan Elg, Davide Curreli

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The emission of species that can chemically or physically alter the surface of post intermediate-focus optics will increase the cost of ownership of such an EUV lithography tool past the point of cost effectiveness. To address this concern, the Center for Plasma-Material Interactions has developed the Sn Intermediate Focus Flux Emission Detector (SNIFFED). The effects of increasing buffer gas, increasing pressure, and chosen buffer gas species will be presented. Furthermore the presence of a secondary plasma, generated by EUV light will be analyzed and exposed as a potential issue in the strive for a contaminant free intermediate focus.

Original languageEnglish (US)
Title of host publicationExtreme Ultraviolet (EUV) Lithography IV
DOIs
StatePublished - Jun 5 2013
EventExtreme Ultraviolet (EUV) Lithography IV - San Jose, CA, United States
Duration: Feb 25 2013Feb 28 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8679
ISSN (Print)0277-786X

Other

OtherExtreme Ultraviolet (EUV) Lithography IV
CountryUnited States
CitySan Jose, CA
Period2/25/132/28/13

Fingerprint

Contamination
Ultraviolet
ultraviolet radiation
Light sources
Buffer
light sources
contamination
Extremes
Plasma
EUV Lithography
Cost-effectiveness
Buffers
buffers
Gases
Plasmas
Optics
Extreme ultraviolet lithography
cost effectiveness
Detector
Beam plasma interactions

Keywords

  • Collector optic
  • Debris mitigation
  • Debris transport
  • EUV
  • Intermediate focus
  • Sniffed
  • Tin

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Ruzic, D. N., Sporre, J., Elg, D., & Curreli, D. (2013). Contamination concerns at the intermediate focus of an extreme ultraviolet light source. In Extreme Ultraviolet (EUV) Lithography IV [86790D] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8679). https://doi.org/10.1117/12.2011612

Contamination concerns at the intermediate focus of an extreme ultraviolet light source. / Ruzic, David N; Sporre, John; Elg, Dan; Curreli, Davide.

Extreme Ultraviolet (EUV) Lithography IV. 2013. 86790D (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8679).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ruzic, DN, Sporre, J, Elg, D & Curreli, D 2013, Contamination concerns at the intermediate focus of an extreme ultraviolet light source. in Extreme Ultraviolet (EUV) Lithography IV., 86790D, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8679, Extreme Ultraviolet (EUV) Lithography IV, San Jose, CA, United States, 2/25/13. https://doi.org/10.1117/12.2011612
Ruzic DN, Sporre J, Elg D, Curreli D. Contamination concerns at the intermediate focus of an extreme ultraviolet light source. In Extreme Ultraviolet (EUV) Lithography IV. 2013. 86790D. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2011612
Ruzic, David N ; Sporre, John ; Elg, Dan ; Curreli, Davide. / Contamination concerns at the intermediate focus of an extreme ultraviolet light source. Extreme Ultraviolet (EUV) Lithography IV. 2013. (Proceedings of SPIE - The International Society for Optical Engineering).
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