Considerations in High Voltage Lateral ESD PNP Design

Milan Shah, Yujie Zhou, David Lafonteese, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work investigates design options for three different classes of high voltage lateral ESD PNPs in a 0.5-μm BCD technology. The PNP layout topology is observed to affect the area efficiency as well as the device's I-V characteristic. Collector-tied field plates exert significant control over the device's turn-on voltage, and this is explored using TCAD. A 'two-valued on-resistance' is observed in some PNP devices, depending on the doping profile.

Original languageEnglish (US)
Title of host publication2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728168937
DOIs
StatePublished - Mar 2021
Externally publishedYes
Event2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Virtual, Monterey, United States
Duration: Mar 21 2021Mar 24 2021

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2021-March
ISSN (Print)1541-7026

Conference

Conference2021 IEEE International Reliability Physics Symposium, IRPS 2021
Country/TerritoryUnited States
CityVirtual, Monterey
Period3/21/213/24/21

Keywords

  • Electrostatic discharge
  • bipolar transistors
  • semiconductor device breakdown
  • semiconductor device reliability

ASJC Scopus subject areas

  • General Engineering

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