@inproceedings{38081f0d93f0498e973e9102f33eaa3a,
title = "Considerations in High Voltage Lateral ESD PNP Design",
abstract = "This work investigates design options for three different classes of high voltage lateral ESD PNPs in a 0.5-μm BCD technology. The PNP layout topology is observed to affect the area efficiency as well as the device's I-V characteristic. Collector-tied field plates exert significant control over the device's turn-on voltage, and this is explored using TCAD. A 'two-valued on-resistance' is observed in some PNP devices, depending on the doping profile.",
keywords = "Electrostatic discharge, bipolar transistors, semiconductor device breakdown, semiconductor device reliability",
author = "Milan Shah and Yujie Zhou and David Lafonteese and Elyse Rosenbaum",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Reliability Physics Symposium, IRPS 2021 ; Conference date: 21-03-2021 Through 24-03-2021",
year = "2021",
month = mar,
doi = "10.1109/IRPS46558.2021.9405093",
language = "English (US)",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings",
address = "United States",
}