Conduction band offset for Ga0.62In0.38N xAs0.991-xSb0.009/GaNyAs 1-y/GaAs systems with different N contents (x=2.2%-3.0% and y=3.1%-4.3% of N) has been investigated by contactless electroreflectance spectroscopy supported by theoretical calculations performed within the effective mass approximation. It has been found that Ga0.62In 0.38NxAs0.991-xSb0.009/GaN yAs1-y, quantum wells (QWs) are promising for laser applications from the point of view of carrier confinement since the conduction band offset (QC) for these QWs is between 70% and 75%. In addition, it has been shown that GaNAs/GaAs interface is type I with QC between 80% and 90%.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)