Conduction band offset for Ga0.62In0.38N xAs0.991-xSb0.009/GaNyAs 1-y/GaAs systems with the ground state transition at 1.5-1.65 μm

R. Kudrawiec, S. R. Bank, H. B. Yuen, H. Bae, M. A. Wistey, L. L. Goddard, James S. Harris, M. Gladysiewicz, M. Motyka, J. Misiewicz

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Abstract

Conduction band offset for Ga0.62In0.38N xAs0.991-xSb0.009/GaNyAs 1-y/GaAs systems with different N contents (x=2.2%-3.0% and y=3.1%-4.3% of N) has been investigated by contactless electroreflectance spectroscopy supported by theoretical calculations performed within the effective mass approximation. It has been found that Ga0.62In 0.38NxAs0.991-xSb0.009/GaN yAs1-y, quantum wells (QWs) are promising for laser applications from the point of view of carrier confinement since the conduction band offset (QC) for these QWs is between 70% and 75%. In addition, it has been shown that GaNAs/GaAs interface is type I with QC between 80% and 90%.

Original languageEnglish (US)
Article number131905
JournalApplied Physics Letters
Volume90
Issue number13
DOIs
StatePublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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