Abstract
Transport phenomena in a double-bend quantum structure fabricated in the two-dimensional electron gas of a modulation doped GaAs/AlGaAs structure, are studied experimentally. The structure consists of an electrostatically defined quantum dot with two one-dimensional wires connected on opposite corners of the dot. The current-voltage characteristics of such devices exhibit quantized conductance breakdown (non-linear behavior), conductance variation with confinement, and non-linear and asymmetric behavior at high bias condition. Low temperature conductance of this structure shows evidence of resonant tunneling, while the peaks of the conductance vary with temperature.
Original language | English (US) |
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Pages (from-to) | 427-433 |
Number of pages | 7 |
Journal | Superlattices and Microstructures |
Volume | 20 |
Issue number | 4 |
DOIs | |
State | Published - 1996 |
Keywords
- Conductance
- Double-bend
- GaAs/AlGaAs
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Electrical and Electronic Engineering