Conductance studies in a double-bend quantum structure

M. Hannan, R. W. Giannetta, R. Grundbacher, I. Adesida, J. Eom, V. Chandrasekhar

Research output: Contribution to journalArticlepeer-review


Transport phenomena in a double-bend quantum structure fabricated in the two-dimensional electron gas of a modulation doped GaAs/AlGaAs structure, are studied experimentally. The structure consists of an electrostatically defined quantum dot with two one-dimensional wires connected on opposite corners of the dot. The current-voltage characteristics of such devices exhibit quantized conductance breakdown (non-linear behavior), conductance variation with confinement, and non-linear and asymmetric behavior at high bias condition. Low temperature conductance of this structure shows evidence of resonant tunneling, while the peaks of the conductance vary with temperature.

Original languageEnglish (US)
Pages (from-to)427-433
Number of pages7
JournalSuperlattices and Microstructures
Issue number4
StatePublished - 1996


  • Conductance
  • Double-bend
  • GaAs/AlGaAs

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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