TY - GEN
T1 - Condition Monitoring of SiC MOSFETs Utilizing Gate Leakage Current
AU - Wang, Patrick
AU - Zatarski, Joseph
AU - Banerjee, Arijit
AU - Donnal, John
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/3
Y1 - 2020/3
N2 - Silicon carbide (SiC) MOSFETs are widely acknowledged for low loss, fast switching and remarkable thermal conductivity compared to silicon (Si) counterparts; however, reliability remains a significant hindrance for the wide adoption in power electronics. Condition monitoring of SiC devices in SiC-based power converters addresses the reliability issues by providing an early sign of potential failure. One of the most consistent failure precursors of degraded SiC MOSFETs is an increase of gate leakage current. This paper presents a method of condition monitoring the SiC MOSFETs with an external circuit that indirectly estimates the gate leakage current during operation. Experimental results obtained with a prototype circuit validate the analysis and method. Reliable information can be obtained for condition monitoring at various duty ratios, dc-link voltages, and load currents in the test setup. With proper calibration, this method opens opportunities to perform prognostic and health monitoring of SiC devices using the estimated on-state gate leakage current.
AB - Silicon carbide (SiC) MOSFETs are widely acknowledged for low loss, fast switching and remarkable thermal conductivity compared to silicon (Si) counterparts; however, reliability remains a significant hindrance for the wide adoption in power electronics. Condition monitoring of SiC devices in SiC-based power converters addresses the reliability issues by providing an early sign of potential failure. One of the most consistent failure precursors of degraded SiC MOSFETs is an increase of gate leakage current. This paper presents a method of condition monitoring the SiC MOSFETs with an external circuit that indirectly estimates the gate leakage current during operation. Experimental results obtained with a prototype circuit validate the analysis and method. Reliable information can be obtained for condition monitoring at various duty ratios, dc-link voltages, and load currents in the test setup. With proper calibration, this method opens opportunities to perform prognostic and health monitoring of SiC devices using the estimated on-state gate leakage current.
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U2 - 10.1109/APEC39645.2020.9124394
DO - 10.1109/APEC39645.2020.9124394
M3 - Conference contribution
AN - SCOPUS:85087763499
T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
SP - 1837
EP - 1843
BT - APEC 2020 - 35th Annual IEEE Applied Power Electronics Conference and Exposition
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 35th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2020
Y2 - 15 March 2020 through 19 March 2020
ER -