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Condition Monitoring of SiC MOSFETs Based on Gate-Leakage Current Estimation
Patrick Wang
, Joseph Zatarski
,
Arijit Banerjee
, John S. Donnal
Electrical and Computer Engineering
Mechanical Science and Engineering
Research output
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Contribution to journal
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Article
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peer-review
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Keyphrases
Condition Monitoring
100%
Silicon Carbide (SiC) MOSFET
100%
Gate Leakage Current
100%
Current Estimation
100%
Thermal Conductivity
25%
In Situ
25%
Operating Conditions
25%
Device Level
25%
In Situ Investigation
25%
Estimation Approaches
25%
Voltage Switching
25%
Power Output
25%
Switching Frequency
25%
Power Frequency
25%
Duty Ratio
25%
Silicon MOSFET
25%
Monitoring Circuit
25%
DC-link Voltage
25%
Failure Precursor
25%
Extended Monitoring
25%
Widespread Adoption
25%
Proposed Strategy
25%
Low Loss
25%
Fast Switching
25%
Power Converter
25%
Gate Oxide Degradation
25%
Engineering
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Condition Monitoring
100%
Thermal Conductivity
20%
Gate Oxide
20%
Output Power
20%
Power Converter
20%
Switching Frequency
20%
Duty Ratio
20%
Dc Link Voltage
20%