Computer analysis of geometry and strain effects in silicon nano-crystal floating-gate flash memory devices

A. Thean; Jean-Pierre Leburton

Computer analysis of geometry and strain effects in silicon nano-crystal floating-gate flash memory devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Computer analysis of nanocrystal memory transistors based on floating gate technology was carried out. Quantization of electronic structure and single-electron charging of nanocrystals was investigated. Effects of geometry and strain due to lattice mismatch on nanocrystals were studied. The device was simulated using Schrodinger and Poisson equations.

Original language	English (US)
Title of host publication	Annual Device Research Conference Digest
Pages	69-70
Number of pages	2
State	Published - 2001
Event	Device Research Conference (DRC) - Notre Dame, IN, United States Duration: Jun 25 2001 → Jun 27 2001

Other

Other	Device Research Conference (DRC)
Country	United States
City	Notre Dame, IN
Period	6/25/01 → 6/27/01

ASJC Scopus subject areas

Engineering(all)

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@inproceedings{30fcbc89f06149ce9b5feb66a0587415,

title = "Computer analysis of geometry and strain effects in silicon nano-crystal floating-gate flash memory devices",

abstract = "Computer analysis of nanocrystal memory transistors based on floating gate technology was carried out. Quantization of electronic structure and single-electron charging of nanocrystals was investigated. Effects of geometry and strain due to lattice mismatch on nanocrystals were studied. The device was simulated using Schrodinger and Poisson equations.",

author = "A. Thean and Jean-Pierre Leburton",

year = "2001",

language = "English (US)",

pages = "69--70",

booktitle = "Annual Device Research Conference Digest",

note = "Device Research Conference (DRC) ; Conference date: 25-06-2001 Through 27-06-2001",

}

TY - GEN

T1 - Computer analysis of geometry and strain effects in silicon nano-crystal floating-gate flash memory devices

AU - Thean, A.

AU - Leburton, Jean-Pierre

PY - 2001

Y1 - 2001

N2 - Computer analysis of nanocrystal memory transistors based on floating gate technology was carried out. Quantization of electronic structure and single-electron charging of nanocrystals was investigated. Effects of geometry and strain due to lattice mismatch on nanocrystals were studied. The device was simulated using Schrodinger and Poisson equations.

AB - Computer analysis of nanocrystal memory transistors based on floating gate technology was carried out. Quantization of electronic structure and single-electron charging of nanocrystals was investigated. Effects of geometry and strain due to lattice mismatch on nanocrystals were studied. The device was simulated using Schrodinger and Poisson equations.

UR - http://www.scopus.com/inward/record.url?scp=0034867153&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034867153&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0034867153

SP - 69

EP - 70

BT - Annual Device Research Conference Digest

T2 - Device Research Conference (DRC)

Y2 - 25 June 2001 through 27 June 2001

ER -