Computer analysis of geometry and strain effects in silicon nano-crystal floating-gate flash memory devices

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Computer analysis of nanocrystal memory transistors based on floating gate technology was carried out. Quantization of electronic structure and single-electron charging of nanocrystals was investigated. Effects of geometry and strain due to lattice mismatch on nanocrystals were studied. The device was simulated using Schrodinger and Poisson equations.

Original languageEnglish (US)
Title of host publicationAnnual Device Research Conference Digest
Pages69-70
Number of pages2
StatePublished - 2001
EventDevice Research Conference (DRC) - Notre Dame, IN, United States
Duration: Jun 25 2001Jun 27 2001

Other

OtherDevice Research Conference (DRC)
CountryUnited States
CityNotre Dame, IN
Period6/25/016/27/01

ASJC Scopus subject areas

  • Engineering(all)

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