Computational issues in the simulation of semiconductor quantum wires

A. Trellakis, U. Ravaioli

Research output: Contribution to journalArticlepeer-review


This paper introduces the main numerical issues related to the simulation of electronic states in highly confined semiconductor systems. A typical example is the semiconductor quantum wire, where double size quantization confines carriers on the cross-section of a conduction channel. We introduce details of the numerical approach for the solution of the coupled Poisson/Schrödinger equation system that describe the quantum system and outline an original iteration approach that uses a predictor-corrector procedure for convergence of the outer iteration. The numerical approach is illustrated by a number of examples for quantum wire structures based on the GaAs/AlGaAs and the Si/SiO2 material systems. The simulations for Si-based structures are interesting to understand the limit of scalability of traditional integrated devices in the plane transverse to the conduction channel. It is also shown that a quasi-monomode Si quantum wire is in principle possible at room temperature.

Original languageEnglish (US)
Pages (from-to)437-449
Number of pages13
JournalComputer Methods in Applied Mechanics and Engineering
Issue number4
StatePublished - Jan 21 2000

ASJC Scopus subject areas

  • Computational Mechanics
  • Mechanics of Materials
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Computer Science Applications


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