MOSFET breakdown voltage is strongly affected by the measurement conditions and the device layout. CDB, CGD, Rsub, and Rgate must be extracted in order to predict the device trigger voltage under subthreshold, non-dc conditions. Substrate resistance is modeled with a simple, semi-empirical equation.
- Avalanche breakdown
- Electrostatic discharge
- Overvoltage protection
- Semiconductor device modeling
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering