Comprehensive study of drain breakdown in MOSFETs

Junjun Li; Hongmei Li; Ryan Barnes; Elyse Rosenbaum

doi:10.1109/TED.2005.848858

Comprehensive study of drain breakdown in MOSFETs

Junjun Li, Hongmei Li, Ryan Barnes, Elyse Rosenbaum

Research output: Contribution to journal › Article › peer-review

Abstract

MOSFET breakdown voltage is strongly affected by the measurement conditions and the device layout. C_DB, C_GD, R_sub, and R_gate must be extracted in order to predict the device trigger voltage under subthreshold, non-dc conditions. Substrate resistance is modeled with a simple, semi-empirical equation.

Original language	English (US)
Pages (from-to)	1180-1186
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	52
Issue number	6
DOIs	https://doi.org/10.1109/TED.2005.848858
State	Published - Jun 2005

Keywords

Avalanche breakdown
Electrostatic discharge
MOSFETs
Overvoltage protection
Semiconductor device modeling

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/TED.2005.848858

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title = "Comprehensive study of drain breakdown in MOSFETs",

abstract = "MOSFET breakdown voltage is strongly affected by the measurement conditions and the device layout. CDB, CGD, Rsub, and Rgate must be extracted in order to predict the device trigger voltage under subthreshold, non-dc conditions. Substrate resistance is modeled with a simple, semi-empirical equation.",

keywords = "Avalanche breakdown, Electrostatic discharge, MOSFETs, Overvoltage protection, Semiconductor device modeling",

author = "Junjun Li and Hongmei Li and Ryan Barnes and Elyse Rosenbaum",

note = "Funding Information: Dr. Rosenbaum has been the recipient of a Best Student Paper Award from the IEDM, a Technical Excellence Award from the SRC, and an NSF CAREER award. She has presented tutorials on reliability physics at the International Reliability Physics Symposium, the EOS/ESD Symposium, and the RFIC Symposium. She is an editor for IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY.",

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AU - Barnes, Ryan

AU - Rosenbaum, Elyse

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PY - 2005/6

Y1 - 2005/6

N2 - MOSFET breakdown voltage is strongly affected by the measurement conditions and the device layout. CDB, CGD, Rsub, and Rgate must be extracted in order to predict the device trigger voltage under subthreshold, non-dc conditions. Substrate resistance is modeled with a simple, semi-empirical equation.

AB - MOSFET breakdown voltage is strongly affected by the measurement conditions and the device layout. CDB, CGD, Rsub, and Rgate must be extracted in order to predict the device trigger voltage under subthreshold, non-dc conditions. Substrate resistance is modeled with a simple, semi-empirical equation.

KW - Avalanche breakdown

KW - Electrostatic discharge

KW - MOSFETs

KW - Overvoltage protection

KW - Semiconductor device modeling

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Comprehensive study of drain breakdown in MOSFETs

Abstract

Keywords

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