Comprehensive study of drain breakdown in MOSFETs

Junjun Li, Hongmei Li, Ryan Barnes, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

MOSFET breakdown voltage is strongly affected by the measurement conditions and the device layout. CDB, CGD, Rsub, and Rgate must be extracted in order to predict the device trigger voltage under subthreshold, non-dc conditions. Substrate resistance is modeled with a simple, semi-empirical equation.

Original languageEnglish (US)
Pages (from-to)1180-1186
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume52
Issue number6
DOIs
StatePublished - Jun 1 2005

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Electric breakdown
Electric potential
Substrates

Keywords

  • Avalanche breakdown
  • Electrostatic discharge
  • MOSFETs
  • Overvoltage protection
  • Semiconductor device modeling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Comprehensive study of drain breakdown in MOSFETs. / Li, Junjun; Li, Hongmei; Barnes, Ryan; Rosenbaum, Elyse.

In: IEEE Transactions on Electron Devices, Vol. 52, No. 6, 01.06.2005, p. 1180-1186.

Research output: Contribution to journalArticle

Li, Junjun ; Li, Hongmei ; Barnes, Ryan ; Rosenbaum, Elyse. / Comprehensive study of drain breakdown in MOSFETs. In: IEEE Transactions on Electron Devices. 2005 ; Vol. 52, No. 6. pp. 1180-1186.
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