Comprehensive study of drain breakdown in MOSFETs

Junjun Li, Hongmei Li, Ryan Barnes, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

MOSFET breakdown voltage is strongly affected by the measurement conditions and the device layout. CDB, CGD, Rsub, and Rgate must be extracted in order to predict the device trigger voltage under subthreshold, non-dc conditions. Substrate resistance is modeled with a simple, semi-empirical equation.

Original languageEnglish (US)
Pages (from-to)1180-1186
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume52
Issue number6
DOIs
StatePublished - Jun 1 2005

Keywords

  • Avalanche breakdown
  • Electrostatic discharge
  • MOSFETs
  • Overvoltage protection
  • Semiconductor device modeling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Comprehensive study of drain breakdown in MOSFETs'. Together they form a unique fingerprint.

Cite this