Comprehensive ESD protection for RF inputs

Sami Hyvonen; Sopan Joshi; Elyse Rosenbaum

doi:10.1016/j.microrel.2004.05.012

Comprehensive ESD protection for RF inputs

Sami Hyvonen
, Sopan Joshi
, Elyse Rosenbaum

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate that narrow-band tuned circuits may be used for ESD protection of RF inputs, and a figure of merit for optimization of these circuits is presented. The performance of the ESD-protected RF circuit is dependent on the quality factor of the ESD device, and various protection devices are evaluated in this work. Record-breaking human body model (HBM) protection levels, exceeding 5 kV, have been achieved without significantly degrading the RF performance at 5 GHz. Broadband circuit protection is also addressed.

Original language	English (US)
Pages (from-to)	245-254
Number of pages	10
Journal	Microelectronics Reliability
Volume	45
Issue number	2
DOIs	https://doi.org/10.1016/j.microrel.2004.05.012
State	Published - Feb 2005

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1016/j.microrel.2004.05.012

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@article{eb2d27247b314549af532664f7bdef9c,

title = "Comprehensive ESD protection for RF inputs",

abstract = "We demonstrate that narrow-band tuned circuits may be used for ESD protection of RF inputs, and a figure of merit for optimization of these circuits is presented. The performance of the ESD-protected RF circuit is dependent on the quality factor of the ESD device, and various protection devices are evaluated in this work. Record-breaking human body model (HBM) protection levels, exceeding 5 kV, have been achieved without significantly degrading the RF performance at 5 GHz. Broadband circuit protection is also addressed.",

author = "Sami Hyvonen and Sopan Joshi and Elyse Rosenbaum",

note = "The work was funded by Semiconductor Research Corporation. The authors would like to thank Motorola Inc. for processing some of the LNAs, Gary Kaatz of Motorola for numerous valuable technical discussions on RF design, and Timothy Maloney of Intel and Pascal Salome of ST Microelectronics for discussions on CDM stress.",

year = "2005",

month = feb,

doi = "10.1016/j.microrel.2004.05.012",

language = "English (US)",

volume = "45",

pages = "245--254",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd",

number = "2",

}

TY - JOUR

T1 - Comprehensive ESD protection for RF inputs

AU - Hyvonen, Sami

AU - Joshi, Sopan

AU - Rosenbaum, Elyse

N1 - The work was funded by Semiconductor Research Corporation. The authors would like to thank Motorola Inc. for processing some of the LNAs, Gary Kaatz of Motorola for numerous valuable technical discussions on RF design, and Timothy Maloney of Intel and Pascal Salome of ST Microelectronics for discussions on CDM stress.

PY - 2005/2

Y1 - 2005/2

N2 - We demonstrate that narrow-band tuned circuits may be used for ESD protection of RF inputs, and a figure of merit for optimization of these circuits is presented. The performance of the ESD-protected RF circuit is dependent on the quality factor of the ESD device, and various protection devices are evaluated in this work. Record-breaking human body model (HBM) protection levels, exceeding 5 kV, have been achieved without significantly degrading the RF performance at 5 GHz. Broadband circuit protection is also addressed.

AB - We demonstrate that narrow-band tuned circuits may be used for ESD protection of RF inputs, and a figure of merit for optimization of these circuits is presented. The performance of the ESD-protected RF circuit is dependent on the quality factor of the ESD device, and various protection devices are evaluated in this work. Record-breaking human body model (HBM) protection levels, exceeding 5 kV, have been achieved without significantly degrading the RF performance at 5 GHz. Broadband circuit protection is also addressed.

UR - https://www.scopus.com/pages/publications/11344280144

UR - https://www.scopus.com/pages/publications/11344280144#tab=citedBy

U2 - 10.1016/j.microrel.2004.05.012

DO - 10.1016/j.microrel.2004.05.012

M3 - Article

AN - SCOPUS:11344280144

SN - 0026-2714

VL - 45

SP - 245

EP - 254

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 2

ER -

Comprehensive ESD protection for RF inputs

Abstract

ASJC Scopus subject areas

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