TY - GEN
T1 - Comprehensive ESD protection for RF inputs
AU - Hyvonen, Sami
AU - Joshi, Sopan
AU - Rosenbaum, Elyse
N1 - Funding Information:
The work was funded by Semiconductor Research Corporation. The authors would like to thank Motorola Inc. for processing some of the LNAs, Gary Kaatz of Motorola for numerous valuable technical discussions on RF design, and Timothy Maloney of Intel and Pascal Salome of ST Microelectronics for discussions on CDM stress.
Publisher Copyright:
© 2003 ESDA.
PY - 2003
Y1 - 2003
N2 - We demonstrate that narrow-band tuned circuits may be used for ESD protection of RF inputs, and a figure of merit for optimization of these circuits is presented. The performance of the ESD protected RF circuit is dependent on the quality factor of the ESD device, and various protection devices are evaluated in this work. Broadband circuit protection is also addressed.
AB - We demonstrate that narrow-band tuned circuits may be used for ESD protection of RF inputs, and a figure of merit for optimization of these circuits is presented. The performance of the ESD protected RF circuit is dependent on the quality factor of the ESD device, and various protection devices are evaluated in this work. Broadband circuit protection is also addressed.
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M3 - Conference contribution
AN - SCOPUS:84945208731
T3 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings
BT - 2003 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2003
PB - ESD Association
T2 - 25th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2003
Y2 - 21 September 2003 through 25 September 2003
ER -