TY - JOUR
T1 - Comprehensive ESD protection for RF inputs
AU - Hyvonen, Sami
AU - Joshi, Sopan
AU - Rosenbaum, Elyse
N1 - Funding Information:
The work was funded by Semiconductor Research Corporation. The authors would like to thank Motorola Inc. for processing some of the LNAs, Gary Kaatz of Motorola for numerous valuable technical discussions on RF design, and Timothy Maloney of Intel and Pascal Salome of ST Microelectronics for discussions on CDM stress.
PY - 2005/2
Y1 - 2005/2
N2 - We demonstrate that narrow-band tuned circuits may be used for ESD protection of RF inputs, and a figure of merit for optimization of these circuits is presented. The performance of the ESD-protected RF circuit is dependent on the quality factor of the ESD device, and various protection devices are evaluated in this work. Record-breaking human body model (HBM) protection levels, exceeding 5 kV, have been achieved without significantly degrading the RF performance at 5 GHz. Broadband circuit protection is also addressed.
AB - We demonstrate that narrow-band tuned circuits may be used for ESD protection of RF inputs, and a figure of merit for optimization of these circuits is presented. The performance of the ESD-protected RF circuit is dependent on the quality factor of the ESD device, and various protection devices are evaluated in this work. Record-breaking human body model (HBM) protection levels, exceeding 5 kV, have been achieved without significantly degrading the RF performance at 5 GHz. Broadband circuit protection is also addressed.
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U2 - 10.1016/j.microrel.2004.05.012
DO - 10.1016/j.microrel.2004.05.012
M3 - Article
AN - SCOPUS:11344280144
SN - 0026-2714
VL - 45
SP - 245
EP - 254
JO - Microelectronics Reliability
JF - Microelectronics Reliability
IS - 2
ER -