Compositional ordering in SiGe alloy thin films

K. Whiteaker, I. Robinson, J. Van Nostrand, D. Cahill

Research output: Contribution to journalArticle


We have performed surface x-ray diffraction experiments on Si0.5Ge0.5 films grown on Ge(001) substrates. The results for our thinnest film (eight monolayers) show the compositional order at the initial stages of growth. This ordering is observed underneath the surface (2×1) dimer reconstruction, and was previously predicted by calculations on the equilibrium alloy surface. This initial surface compositional ordering is also consistent with the ultimate structure for the bulk of these films. Measurements from thicker alloy films show an increase in the average order parameter with increasing thickness, but then a decrease with the thickest film of 1000 Å.

Original languageEnglish (US)
Pages (from-to)12410-12420
Number of pages11
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number19
StatePublished - Jan 1 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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