Composition-graded AlInP/AlGaAsSb/InP type-II DHBTs with f T/fMAX = 450/510GHz

Huiming Xu; Eric W. Iverson; Chi Chih Liao; K. Y. Cheng; Milton Feng

doi:10.1109/LED.2012.2224090

Composition-graded AlInP/AlGaAsSb/InP type-II DHBTs with f _T/f_MAX = 450/510GHz

Huiming Xu
, Eric W. Iverson
, Chi Chih Liao
, K. Y. Cheng
, Milton Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A type-II AlInP/AlGaAsSb/InP double heterojunction bipolar transistor (DHBT) with composition-graded Al content in the base is designed and grown by molecular beam epitaxy. Compared with composition-graded GaAsSb and InGaAsSb bases in DHBT, the graded AlGaAsSb base can generate a larger built-in electric field, thus reducing base transit time and improving device speed. We have fabricated AlGaAsSb graded base DHBTs and demonstrated f_T/f _MAX450/510GHz for a 0.3 × 2μm² device.

Original language	English (US)
Article number	6361454
Pages (from-to)	33-35
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	1
DOIs	https://doi.org/10.1109/LED.2012.2224090
State	Published - 2013

Keywords

AlGaAsSb
InP
double heterojunction bipolar transistor (DHBT)
millimeter wave

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/LED.2012.2224090

Library availability

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Cite this

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title = "Composition-graded AlInP/AlGaAsSb/InP type-II DHBTs with f T/fMAX = 450/510GHz",

abstract = "A type-II AlInP/AlGaAsSb/InP double heterojunction bipolar transistor (DHBT) with composition-graded Al content in the base is designed and grown by molecular beam epitaxy. Compared with composition-graded GaAsSb and InGaAsSb bases in DHBT, the graded AlGaAsSb base can generate a larger built-in electric field, thus reducing base transit time and improving device speed. We have fabricated AlGaAsSb graded base DHBTs and demonstrated fT/f MAX450/510GHz for a 0.3 × 2μm2 device.",

keywords = "AlGaAsSb, InP, double heterojunction bipolar transistor (DHBT), millimeter wave",

author = "Huiming Xu and Iverson, \{Eric W.\} and Liao, \{Chi Chih\} and Cheng, \{K. Y.\} and Milton Feng",

year = "2013",

doi = "10.1109/LED.2012.2224090",

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AU - Liao, Chi Chih

AU - Cheng, K. Y.

AU - Feng, Milton

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N2 - A type-II AlInP/AlGaAsSb/InP double heterojunction bipolar transistor (DHBT) with composition-graded Al content in the base is designed and grown by molecular beam epitaxy. Compared with composition-graded GaAsSb and InGaAsSb bases in DHBT, the graded AlGaAsSb base can generate a larger built-in electric field, thus reducing base transit time and improving device speed. We have fabricated AlGaAsSb graded base DHBTs and demonstrated fT/f MAX450/510GHz for a 0.3 × 2μm2 device.

AB - A type-II AlInP/AlGaAsSb/InP double heterojunction bipolar transistor (DHBT) with composition-graded Al content in the base is designed and grown by molecular beam epitaxy. Compared with composition-graded GaAsSb and InGaAsSb bases in DHBT, the graded AlGaAsSb base can generate a larger built-in electric field, thus reducing base transit time and improving device speed. We have fabricated AlGaAsSb graded base DHBTs and demonstrated fT/f MAX450/510GHz for a 0.3 × 2μm2 device.

KW - AlGaAsSb

KW - InP

KW - double heterojunction bipolar transistor (DHBT)

KW - millimeter wave

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