Composition-graded AlInP/AlGaAsSb/InP type-II DHBTs with f T/fMAX = 450/510GHz

Huiming Xu, Eric W. Iverson, Chi Chih Liao, K. Y. Cheng, Milton Feng

Research output: Contribution to journalArticlepeer-review

Abstract

A type-II AlInP/AlGaAsSb/InP double heterojunction bipolar transistor (DHBT) with composition-graded Al content in the base is designed and grown by molecular beam epitaxy. Compared with composition-graded GaAsSb and InGaAsSb bases in DHBT, the graded AlGaAsSb base can generate a larger built-in electric field, thus reducing base transit time and improving device speed. We have fabricated AlGaAsSb graded base DHBTs and demonstrated fT/f MAX450/510GHz for a 0.3 × 2μm2 device.

Original languageEnglish (US)
Article number6361454
Pages (from-to)33-35
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number1
DOIs
StatePublished - Jan 1 2013

Keywords

  • AlGaAsSb
  • InP
  • double heterojunction bipolar transistor (DHBT)
  • millimeter wave

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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