Composition dependence of the influence of lattice mismatch on surface morphology in LPE growth of InGaAsP on (100) -InP

M. Feng, M. M. Tashima, T. H. Windhorn, G. E. Stillman

Research output: Contribution to journalArticlepeer-review

Abstract

The dependence of the surface morphology and the interface misfit dislocation density on the amount of lattice mismatch varies considerably with the composition of the quaternary material in the 1.15-1.31-μm band-gap range. For the same amount of lattice mismatch the surface morphology becomes poorer for the longer-wavelength material, and this causes melt removal problems in the LPE growth unless the lattice mismatch is less than 0.09%. For the growth of 1.31-μm band-gap material of good crystallographic quality, it is essential that the lattice mismatch be less than 0.03%.

Original languageEnglish (US)
Pages (from-to)533-536
Number of pages4
JournalApplied Physics Letters
Volume33
Issue number6
DOIs
StatePublished - Dec 1 1978

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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