Abstract
A composition comprising an engineered defect concentration comprises a metal oxide single crystal having a polar surface and a bulk concentration of interstitial oxygen (Oi) of at least about 1014 atoms/cm3. The polar surface comprises a concentration of impurity species of about 5' or less of a monolayer. A method of engineering a defect concentration in a single crystal comprises exposing a metal oxide single crystal having a polar surface to molecular oxygen at a temperature of about 850° C. or less, and injecting atomic oxygen into the single crystal at an effective diffusion rate Deff of at least about 10−16 cm2/s.
| Original language | English (US) |
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| U.S. patent number | 10161062 |
| Filing date | 4/21/16 |
| State | Published - Dec 25 2018 |