Composite-CMOS integrated photonics for high bandwidth WDM optical interconnects

Timothy Creazzo; Elton Marchena; Stephen B. Krasulick; Paul K.L. Yu; Derek Van Orden; John Y. Spann; Christopher C. Blivin; Lina He; Hong Cai; John M. Dallesasse; Robert J. Stone; Amit Mizrahi

doi:10.1117/12.2044277

Composite-CMOS integrated photonics for high bandwidth WDM optical interconnects

Timothy Creazzo, Elton Marchena, Stephen B. Krasulick, Paul K.L. Yu, Derek Van Orden, John Y. Spann, Christopher C. Blivin, Lina He, Hong Cai, John M. Dallesasse, Robert J. Stone, Amit Mizrahi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Bandwidth requirements continue to drive the need for low-power, high speed interconnects. Harnessing the mature CMOS technology for high volume manufacturing, Silicon Photonics is a top candidate for providing a viable solution for high bandwidth, low cost, low power, and high packing density, optical interconnects. The major drawback of silicon, however, is that it is an indirect bandgap material, and thus cannot produce coherent light. Consequently, different integration schemes of III/V materials on silicon are being explored. An integrated CMOS tunable laser is demonstrated as part of a composite-CMOS integration platform that enables high bandwidth optical interconnects. The integration platform embeds III-V into silicon chips using a metal bonding technique that provides low thermal resistance and avoids lattice mismatch problems. The performance of the laser including side mode suppression ratio, relative intensity noise, and linewidth is summarized.

Original language	English (US)
Title of host publication	Optical Interconnects XIV
Publisher	SPIE
ISBN (Print)	9780819499042
DOIs	https://doi.org/10.1117/12.2044277
State	Published - 2014
Externally published	Yes
Event	Optical Interconnects XIV - San Francisco, CA, United States Duration: Feb 3 2014 → Feb 5 2014

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8991
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Other

Other	Optical Interconnects XIV
Country/Territory	United States
City	San Francisco, CA
Period	2/3/14 → 2/5/14

Keywords

CMOS
Photonic integrated circuits
Semiconductor lasers
Silicon laser
Silicon photonics
Tunable laser

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Online availability

10.1117/12.2044277

Library availability

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Cite this

Creazzo, T., Marchena, E., Krasulick, S. B., Yu, P. K. L., Van Orden, D., Spann, J. Y., Blivin, C. C., He, L., Cai, H., Dallesasse, J. M., Stone, R. J., & Mizrahi, A. (2014). Composite-CMOS integrated photonics for high bandwidth WDM optical interconnects. In Optical Interconnects XIV Article 89910N (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8991). SPIE. https://doi.org/10.1117/12.2044277

Creazzo, T, Marchena, E, Krasulick, SB, Yu, PKL, Van Orden, D, Spann, JY, Blivin, CC, He, L, Cai, H, Dallesasse, JM, Stone, RJ & Mizrahi, A 2014, Composite-CMOS integrated photonics for high bandwidth WDM optical interconnects. in Optical Interconnects XIV., 89910N, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8991, SPIE, Optical Interconnects XIV, San Francisco, CA, United States, 2/3/14. https://doi.org/10.1117/12.2044277

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title = "Composite-CMOS integrated photonics for high bandwidth WDM optical interconnects",

abstract = "Bandwidth requirements continue to drive the need for low-power, high speed interconnects. Harnessing the mature CMOS technology for high volume manufacturing, Silicon Photonics is a top candidate for providing a viable solution for high bandwidth, low cost, low power, and high packing density, optical interconnects. The major drawback of silicon, however, is that it is an indirect bandgap material, and thus cannot produce coherent light. Consequently, different integration schemes of III/V materials on silicon are being explored. An integrated CMOS tunable laser is demonstrated as part of a composite-CMOS integration platform that enables high bandwidth optical interconnects. The integration platform embeds III-V into silicon chips using a metal bonding technique that provides low thermal resistance and avoids lattice mismatch problems. The performance of the laser including side mode suppression ratio, relative intensity noise, and linewidth is summarized.",

keywords = "CMOS, Photonic integrated circuits, Semiconductor lasers, Silicon laser, Silicon photonics, Tunable laser",

author = "Timothy Creazzo and Elton Marchena and Krasulick, {Stephen B.} and Yu, {Paul K.L.} and {Van Orden}, Derek and Spann, {John Y.} and Blivin, {Christopher C.} and Lina He and Hong Cai and Dallesasse, {John M.} and Stone, {Robert J.} and Amit Mizrahi",

year = "2014",

doi = "10.1117/12.2044277",

language = "English (US)",

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series = "Proceedings of SPIE - The International Society for Optical Engineering",

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AU - Creazzo, Timothy

AU - Marchena, Elton

AU - Krasulick, Stephen B.

AU - Yu, Paul K.L.

AU - Van Orden, Derek

AU - Spann, John Y.

AU - Blivin, Christopher C.

AU - He, Lina

AU - Cai, Hong

AU - Dallesasse, John M.

AU - Stone, Robert J.

AU - Mizrahi, Amit

PY - 2014

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N2 - Bandwidth requirements continue to drive the need for low-power, high speed interconnects. Harnessing the mature CMOS technology for high volume manufacturing, Silicon Photonics is a top candidate for providing a viable solution for high bandwidth, low cost, low power, and high packing density, optical interconnects. The major drawback of silicon, however, is that it is an indirect bandgap material, and thus cannot produce coherent light. Consequently, different integration schemes of III/V materials on silicon are being explored. An integrated CMOS tunable laser is demonstrated as part of a composite-CMOS integration platform that enables high bandwidth optical interconnects. The integration platform embeds III-V into silicon chips using a metal bonding technique that provides low thermal resistance and avoids lattice mismatch problems. The performance of the laser including side mode suppression ratio, relative intensity noise, and linewidth is summarized.

AB - Bandwidth requirements continue to drive the need for low-power, high speed interconnects. Harnessing the mature CMOS technology for high volume manufacturing, Silicon Photonics is a top candidate for providing a viable solution for high bandwidth, low cost, low power, and high packing density, optical interconnects. The major drawback of silicon, however, is that it is an indirect bandgap material, and thus cannot produce coherent light. Consequently, different integration schemes of III/V materials on silicon are being explored. An integrated CMOS tunable laser is demonstrated as part of a composite-CMOS integration platform that enables high bandwidth optical interconnects. The integration platform embeds III-V into silicon chips using a metal bonding technique that provides low thermal resistance and avoids lattice mismatch problems. The performance of the laser including side mode suppression ratio, relative intensity noise, and linewidth is summarized.

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KW - Photonic integrated circuits

KW - Semiconductor lasers

KW - Silicon laser

KW - Silicon photonics

KW - Tunable laser

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Composite-CMOS integrated photonics for high bandwidth WDM optical interconnects

Abstract

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Keywords

ASJC Scopus subject areas

Online availability

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