Comparison of wavelength splitting for transverse VCSEL modes

E. W. Young, K. D. Choquette, S. L. Chuang, K. M. Geib, A. A. Allerman

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Recently we reported high-power single-fundamental mode operation of an 850-nm vertical cavity laser using a hybrid ion implanted/selectively oxidized structure [1]. By using two types of apertures, the current can be selectively injected through the smaller implant aperture into the fundamental mode producing lasing in a single transverse mode. In this paper, we characterize the behavior of hybrid VCSELs through the wavelength splitting between the fundamental mode (LP01) and the first higher order mode (LP11), and compare to those found in selectively oxidized and proton implanted VCSELs grown on the same wafer.

Original languageEnglish (US)
Title of host publication2002 IEEE/LEOS - Summer Topical Meeting
Subtitle of host publicationAll-Optical Networking: Existing and Emerging Architecture and Applications
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Electronic)0780373782
StatePublished - 2002
EventIEEE/LEOS - Summer Topical Meeting - Mont Tremblant, Canada
Duration: Jul 15 2002Jul 17 2002

Publication series

NameLEOS Summer Topical Meeting
ISSN (Print)1099-4742


OtherIEEE/LEOS - Summer Topical Meeting
CityMont Tremblant

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Comparison of wavelength splitting for transverse VCSEL modes'. Together they form a unique fingerprint.

Cite this