Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates

Erdem Cicek, Zahra Vashaei, Can Bayram, Ryan McClintock, Manijeh Razeghi, Melville P. Ulmer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

There is a need for semiconductor-based ultraviolet photodetectors to support avalanche gain in order to realize better performance andmore effective compete with existing technologies. Wide bandgap III-Nitride semiconductors are the promising material system for the development of avalanche photodiodes (APDs) that could be a viable alternative to current bulky UV detectors such as photomultiplier tubes. In this paper, we review the current state-of-the-art in IIINitride visible-blind APDs, and present our latest results on GaN APDs grown on both conventional sapphire and low dislocation density free-standing c- and m-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs were compared. The spectral response and Geiger-mode photon counting performance of UV APDs are studied under low photon fluxes, with single photon detection capabilities as much as 30% being demonstrated in smaller devices. Geiger-mode operation conditions are optimized for enhanced SPDE.

Original languageEnglish (US)
Title of host publicationDetectors and Imaging Devices
Subtitle of host publicationInfrared, Focal Plane, Single Photon
DOIs
StatePublished - Oct 25 2010
Externally publishedYes
EventDetectors and Imaging Devices: Infrared, Focal Plane, Single Photon - San Diego, CA, United States
Duration: Aug 4 2010Aug 5 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7780
ISSN (Print)0277-786X

Other

OtherDetectors and Imaging Devices: Infrared, Focal Plane, Single Photon
CountryUnited States
CitySan Diego, CA
Period8/4/108/5/10

Keywords

  • APD
  • Avalanche photodiode
  • GaN
  • Geiger Mode
  • Polar and nonpolar GaN substrates
  • Single photon detection

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Cicek, E., Vashaei, Z., Bayram, C., McClintock, R., Razeghi, M., & Ulmer, M. P. (2010). Comparison of ultraviolet APDs grown on free-standing GaN and sapphire substrates. In Detectors and Imaging Devices: Infrared, Focal Plane, Single Photon [77801P] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 7780). https://doi.org/10.1117/12.863905