This paper reports the successful bonding of 8 × 8 and 4 × 4 VCSEL arrays to Si CMOS and GaAs MESFET integrated circuits and to GaAs substrates. Three different bonding techniques are demonstrated and their electrical, optical and mechanical characteristics are compared. All three techniques remove the substrate from the VCSEL wafer, leaving individual VCSELs bonded directly to locations within the integrated circuit.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics