Comparison of single-walled carbon nanotube transistors fabricated by dielectrophoresis and CVD growth

Sunkook Kim, Congjun Wang, Moonsub Shim, Saeed Mohammadi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We are comparing two different fabrication technologies for bottom-gate single-walled carbon nanotube field effect transistors. The first technology is based on self-assembly of single-walled nanotube bundles using dielectrophoresis. By applying a combination of DC and AC electric fields, we were able to separate metallic and semiconducting nanotubes and align the semiconducting nanotube bundles between source and drain patterns. Fabricated transistors showed current values in the order of tens of nA and transconductance of 50nS for devices with one bundle (15nm width). The second technology is based on synthesis of single-walled carbon nanotubes on top of Poly-Si gate using chemical vapor deposition. Transistors fabricated in this technology with only two nanotubes showed current drive in the order of several μA but much higher transconductance of 930nS. This technology also allowed much lower contact resistances to the nanotubes compared to devices fabricated using dielectrophoresis.

Original languageEnglish (US)
Title of host publication2005 5th IEEE Conference on Nanotechnology
Pages141-144
Number of pages4
DOIs
StatePublished - 2005
Event2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan
Duration: Jul 11 2005Jul 15 2005

Publication series

Name2005 5th IEEE Conference on Nanotechnology
Volume2

Other

Other2005 5th IEEE Conference on Nanotechnology
Country/TerritoryJapan
CityNagoya
Period7/11/057/15/05

Keywords

  • Carbon Nanotubes
  • Chemical Vapor Deposition
  • Contact Resistance
  • Dielectrophoresis
  • Field Effect Transistors
  • Nanotechnology
  • Poly-Silicon

ASJC Scopus subject areas

  • Engineering(all)

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