Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors

D. K. Sengupta; J. L. Malin; S. I. Jackson; W. Fang; W. Wu; H. C. Kuo; C. Rowe; S. L. Chuang; K. C. Hsieh; J. R. Tucker; J. W. Lyding; M. Feng; G. E. Stillman; H. C. Liu

doi:10.1557/proc-421-203

Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors

D. K. Sengupta
, J. L. Malin
, S. I. Jackson
, W. Fang
, W. Wu
, H. C. Kuo
, C. Rowe
, S. L. Chuang
, K. C. Hsieh
, J. R. Tucker
, J. W. Lyding
, M. Feng
, G. E. Stillman
, H. C. Liu

Research output: Contribution to journal › Conference article › peer-review

Abstract

Over an order of magnitude reduction in dark current was observed for gas-source molecular beam epitaxially (GSMBE) grown, lattice-matched n- and p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs). Peak spectral response at 8.93 and 4.55 μm for n- and p-type QWIPs, respectively, open the possibility of dual-band monolithic integration under identical GSMBE growth conditions.

Original language	English (US)
Pages (from-to)	203-208
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	421
DOIs	https://doi.org/10.1557/proc-421-203
State	Published - 1996
Event	Proceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-421-203

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Sengupta, D. K., Malin, J. L., Jackson, S. I., Fang, W., Wu, W., Kuo, H. C., Rowe, C., Chuang, S. L., Hsieh, K. C., Tucker, J. R., Lyding, J. W., Feng, M., Stillman, G. E., & Liu, H. C. (1996). Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors. Materials Research Society Symposium - Proceedings, 421, 203-208. https://doi.org/10.1557/proc-421-203

@article{d7ac937d70164733ba2b87f7c54788c0,

title = "Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors",

abstract = "Over an order of magnitude reduction in dark current was observed for gas-source molecular beam epitaxially (GSMBE) grown, lattice-matched n- and p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs). Peak spectral response at 8.93 and 4.55 μm for n- and p-type QWIPs, respectively, open the possibility of dual-band monolithic integration under identical GSMBE growth conditions.",

author = "Sengupta, \{D. K.\} and Malin, \{J. L.\} and Jackson, \{S. I.\} and W. Fang and W. Wu and Kuo, \{H. C.\} and C. Rowe and Chuang, \{S. L.\} and Hsieh, \{K. C.\} and Tucker, \{J. R.\} and Lyding, \{J. W.\} and M. Feng and Stillman, \{G. E.\} and Liu, \{H. C.\}",

year = "1996",

doi = "10.1557/proc-421-203",

language = "English (US)",

volume = "421",

pages = "203--208",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Meeting ; Conference date: 08-04-1996 Through 12-04-1996",

}

TY - JOUR

T1 - Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors

AU - Sengupta, D. K.

AU - Malin, J. L.

AU - Jackson, S. I.

AU - Fang, W.

AU - Wu, W.

AU - Kuo, H. C.

AU - Rowe, C.

AU - Chuang, S. L.

AU - Hsieh, K. C.

AU - Tucker, J. R.

AU - Lyding, J. W.

AU - Feng, M.

AU - Stillman, G. E.

AU - Liu, H. C.

PY - 1996

Y1 - 1996

N2 - Over an order of magnitude reduction in dark current was observed for gas-source molecular beam epitaxially (GSMBE) grown, lattice-matched n- and p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs). Peak spectral response at 8.93 and 4.55 μm for n- and p-type QWIPs, respectively, open the possibility of dual-band monolithic integration under identical GSMBE growth conditions.

AB - Over an order of magnitude reduction in dark current was observed for gas-source molecular beam epitaxially (GSMBE) grown, lattice-matched n- and p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs). Peak spectral response at 8.93 and 4.55 μm for n- and p-type QWIPs, respectively, open the possibility of dual-band monolithic integration under identical GSMBE growth conditions.

UR - https://www.scopus.com/pages/publications/0030377297

UR - https://www.scopus.com/pages/publications/0030377297#tab=citedBy

U2 - 10.1557/proc-421-203

DO - 10.1557/proc-421-203

M3 - Conference article

AN - SCOPUS:0030377297

SN - 0272-9172

VL - 421

SP - 203

EP - 208

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Meeting

Y2 - 8 April 1996 through 12 April 1996

ER -

Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors

Abstract

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