Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors

D. K. Sengupta, J. L. Malin, S. I. Jackson, W. Fang, W. Wu, H. C. Kuo, C. Rowe, S. L. Chuang, K. C. Hsieh, J. R. Tucker, J. W. Lyding, M. Feng, G. E. Stillman, H. C. Liu

Research output: Contribution to journalConference article

Abstract

Over an order of magnitude reduction in dark current was observed for gas-source molecular beam epitaxially (GSMBE) grown, lattice-matched n- and p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs). Peak spectral response at 8.93 and 4.55 μm for n- and p-type QWIPs, respectively, open the possibility of dual-band monolithic integration under identical GSMBE growth conditions.

Original languageEnglish (US)
Pages (from-to)203-208
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume421
StatePublished - Dec 1 1996
EventProceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Sengupta, D. K., Malin, J. L., Jackson, S. I., Fang, W., Wu, W., Kuo, H. C., Rowe, C., Chuang, S. L., Hsieh, K. C., Tucker, J. R., Lyding, J. W., Feng, M., Stillman, G. E., & Liu, H. C. (1996). Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors. Materials Research Society Symposium - Proceedings, 421, 203-208.