Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors

D. K. Sengupta; J. L. Malin; S. I. Jackson; W. Fang; W. Wu; H. C. Kuo; C. Rowe; S. L. Chuang; K. C. Hsieh; J. R. Tucker; J. W. Lyding; M. Feng; G. E. Stillman; H. C. Liu

doi:10.1557/proc-421-203

Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors

D. K. Sengupta, J. L. Malin, S. I. Jackson, W. Fang, W. Wu, H. C. Kuo, C. Rowe, S. L. Chuang, K. C. Hsieh, J. R. Tucker, J. W. Lyding, M. Feng, G. E. Stillman, H. C. Liu

Research output: Contribution to journal › Conference article › peer-review

Abstract

Over an order of magnitude reduction in dark current was observed for gas-source molecular beam epitaxially (GSMBE) grown, lattice-matched n- and p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs). Peak spectral response at 8.93 and 4.55 μm for n- and p-type QWIPs, respectively, open the possibility of dual-band monolithic integration under identical GSMBE growth conditions.

Original language	English (US)
Pages (from-to)	203-208
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	421
DOIs	https://doi.org/10.1557/proc-421-203
State	Published - 1996
Event	Proceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 8 1996 → Apr 12 1996

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-421-203

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Sengupta, D. K., Malin, J. L., Jackson, S. I., Fang, W., Wu, W., Kuo, H. C., Rowe, C., Chuang, S. L., Hsieh, K. C., Tucker, J. R., Lyding, J. W., Feng, M., Stillman, G. E., & Liu, H. C. (1996). Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors. Materials Research Society Symposium - Proceedings, 421, 203-208. https://doi.org/10.1557/proc-421-203

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title = "Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors",

abstract = "Over an order of magnitude reduction in dark current was observed for gas-source molecular beam epitaxially (GSMBE) grown, lattice-matched n- and p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs). Peak spectral response at 8.93 and 4.55 μm for n- and p-type QWIPs, respectively, open the possibility of dual-band monolithic integration under identical GSMBE growth conditions.",

author = "Sengupta, {D. K.} and Malin, {J. L.} and Jackson, {S. I.} and W. Fang and W. Wu and Kuo, {H. C.} and C. Rowe and Chuang, {S. L.} and Hsieh, {K. C.} and Tucker, {J. R.} and Lyding, {J. W.} and M. Feng and Stillman, {G. E.} and Liu, {H. C.}",

year = "1996",

doi = "10.1557/proc-421-203",

language = "English (US)",

volume = "421",

pages = "203--208",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Meeting ; Conference date: 08-04-1996 Through 12-04-1996",

}

TY - JOUR

T1 - Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors

AU - Sengupta, D. K.

AU - Malin, J. L.

AU - Jackson, S. I.

AU - Fang, W.

AU - Wu, W.

AU - Kuo, H. C.

AU - Rowe, C.

AU - Chuang, S. L.

AU - Hsieh, K. C.

AU - Tucker, J. R.

AU - Lyding, J. W.

AU - Feng, M.

AU - Stillman, G. E.

AU - Liu, H. C.

PY - 1996

Y1 - 1996

N2 - Over an order of magnitude reduction in dark current was observed for gas-source molecular beam epitaxially (GSMBE) grown, lattice-matched n- and p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs). Peak spectral response at 8.93 and 4.55 μm for n- and p-type QWIPs, respectively, open the possibility of dual-band monolithic integration under identical GSMBE growth conditions.

AB - Over an order of magnitude reduction in dark current was observed for gas-source molecular beam epitaxially (GSMBE) grown, lattice-matched n- and p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs). Peak spectral response at 8.93 and 4.55 μm for n- and p-type QWIPs, respectively, open the possibility of dual-band monolithic integration under identical GSMBE growth conditions.

UR - http://www.scopus.com/inward/record.url?scp=0030377297&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030377297&partnerID=8YFLogxK

U2 - 10.1557/proc-421-203

DO - 10.1557/proc-421-203

M3 - Conference article

AN - SCOPUS:0030377297

SN - 0272-9172

VL - 421

SP - 203

EP - 208

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Meeting

Y2 - 8 April 1996 through 12 April 1996

ER -

Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors

Abstract

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