Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors

D. K. Sengupta, J. L. Malin, S. I. Jackson, W. Fang, W. Wu, H. C. Kuo, C. Rowe, S. L. Chuang, K. C. Hsieh, J. R. Tucker, J. W. Lyding, M. Feng, G. E. Stillman, H. C. Liu

Research output: Contribution to journalConference article

Abstract

Over an order of magnitude reduction in dark current was observed for gas-source molecular beam epitaxially (GSMBE) grown, lattice-matched n- and p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs). Peak spectral response at 8.93 and 4.55 μm for n- and p-type QWIPs, respectively, open the possibility of dual-band monolithic integration under identical GSMBE growth conditions.

Original languageEnglish (US)
Pages (from-to)203-208
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume421
StatePublished - Dec 1 1996
EventProceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 8 1996Apr 12 1996

Fingerprint

Quantum well infrared photodetectors
quantum well infrared photodetectors
Molecular beams
molecular beams
Gases
Dark currents
dark current
spectral sensitivity
gases

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Sengupta, D. K., Malin, J. L., Jackson, S. I., Fang, W., Wu, W., Kuo, H. C., ... Liu, H. C. (1996). Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors. Materials Research Society Symposium - Proceedings, 421, 203-208.

Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors. / Sengupta, D. K.; Malin, J. L.; Jackson, S. I.; Fang, W.; Wu, W.; Kuo, H. C.; Rowe, C.; Chuang, S. L.; Hsieh, K. C.; Tucker, J. R.; Lyding, J. W.; Feng, M.; Stillman, G. E.; Liu, H. C.

In: Materials Research Society Symposium - Proceedings, Vol. 421, 01.12.1996, p. 203-208.

Research output: Contribution to journalConference article

Sengupta, DK, Malin, JL, Jackson, SI, Fang, W, Wu, W, Kuo, HC, Rowe, C, Chuang, SL, Hsieh, KC, Tucker, JR, Lyding, JW, Feng, M, Stillman, GE & Liu, HC 1996, 'Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors', Materials Research Society Symposium - Proceedings, vol. 421, pp. 203-208.
Sengupta DK, Malin JL, Jackson SI, Fang W, Wu W, Kuo HC et al. Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors. Materials Research Society Symposium - Proceedings. 1996 Dec 1;421:203-208.
Sengupta, D. K. ; Malin, J. L. ; Jackson, S. I. ; Fang, W. ; Wu, W. ; Kuo, H. C. ; Rowe, C. ; Chuang, S. L. ; Hsieh, K. C. ; Tucker, J. R. ; Lyding, J. W. ; Feng, M. ; Stillman, G. E. ; Liu, H. C. / Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors. In: Materials Research Society Symposium - Proceedings. 1996 ; Vol. 421. pp. 203-208.
@article{d7ac937d70164733ba2b87f7c54788c0,
title = "Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors",
abstract = "Over an order of magnitude reduction in dark current was observed for gas-source molecular beam epitaxially (GSMBE) grown, lattice-matched n- and p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs). Peak spectral response at 8.93 and 4.55 μm for n- and p-type QWIPs, respectively, open the possibility of dual-band monolithic integration under identical GSMBE growth conditions.",
author = "Sengupta, {D. K.} and Malin, {J. L.} and Jackson, {S. I.} and W. Fang and W. Wu and Kuo, {H. C.} and C. Rowe and Chuang, {S. L.} and Hsieh, {K. C.} and Tucker, {J. R.} and Lyding, {J. W.} and M. Feng and Stillman, {G. E.} and Liu, {H. C.}",
year = "1996",
month = "12",
day = "1",
language = "English (US)",
volume = "421",
pages = "203--208",
journal = "Materials Research Society Symposium Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

TY - JOUR

T1 - Comparison of n- and p-type InGaAs/InP quantum well infrared photodetectors

AU - Sengupta, D. K.

AU - Malin, J. L.

AU - Jackson, S. I.

AU - Fang, W.

AU - Wu, W.

AU - Kuo, H. C.

AU - Rowe, C.

AU - Chuang, S. L.

AU - Hsieh, K. C.

AU - Tucker, J. R.

AU - Lyding, J. W.

AU - Feng, M.

AU - Stillman, G. E.

AU - Liu, H. C.

PY - 1996/12/1

Y1 - 1996/12/1

N2 - Over an order of magnitude reduction in dark current was observed for gas-source molecular beam epitaxially (GSMBE) grown, lattice-matched n- and p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs). Peak spectral response at 8.93 and 4.55 μm for n- and p-type QWIPs, respectively, open the possibility of dual-band monolithic integration under identical GSMBE growth conditions.

AB - Over an order of magnitude reduction in dark current was observed for gas-source molecular beam epitaxially (GSMBE) grown, lattice-matched n- and p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs). Peak spectral response at 8.93 and 4.55 μm for n- and p-type QWIPs, respectively, open the possibility of dual-band monolithic integration under identical GSMBE growth conditions.

UR - http://www.scopus.com/inward/record.url?scp=0030377297&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030377297&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0030377297

VL - 421

SP - 203

EP - 208

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

SN - 0272-9172

ER -