Comparison of Monte Carlo and NEGF simulations of double gate MOSFETs

Ra Ravishankar, Gulzar Kathawala, Umberto Ravaioli, Sayed Hasan, Mark Lundstrom

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publication2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages95-96
Number of pages2
ISBN (Print)0780386493, 9780780386495
DOIs
StatePublished - Jan 1 2004
Event2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts - West Lafayette, IN, United States
Duration: Oct 24 2004Oct 27 2004

Publication series

Name2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts

Other

Other2004 10th International Workshop on Computational Electronics: The Field of Computational Electronics - Looking Back and Looking Ahead, IEEE IWCE-10 2004, Abstracts
CountryUnited States
CityWest Lafayette, IN
Period10/24/0410/27/04

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Comparison of Monte Carlo and NEGF simulations of double gate MOSFETs'. Together they form a unique fingerprint.

  • Cite this

    Ravishankar, R., Kathawala, G., Ravaioli, U., Hasan, S., & Lundstrom, M. (2004). Comparison of Monte Carlo and NEGF simulations of double gate MOSFETs. In 2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts (pp. 95-96). (2004 10th International Workshop on Computational Electronics, IEEE IWCE-10 2004, Abstracts). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/iwce.2004.1407341