Abstract
The present work compares the simulation results of the two-dimensional full band Monte Carlo simulator (MOCA) developed at the University of Illinois at Urbana-Champaign and the two-dimensional quantum simulator (NanoMOS) developed at Purdue University. Double-gate MOSFETs of three body thicknesses - tSi = 4, 3 and 2 nm - Were considered in this study. For a body thickness of 4 nm, the conduction band profiles and sheet charge densities obtained from MOCA and NanoMOS almost overlap, particularly for high gate and drain-to-source biases. However, as the body thickness is reduced, quantum effects are captured more naturally in NanoMOS since MOCA only uses a simple quantum correction scheme, with an otherwise semi-classical model. However, even for thinner devices, since MOCA makes use of a detailed band structure and scattering model, high energy transport is better reproduced by the Monte Carlo procedure. A particle description is appealing for nanoscale simulation, in order to reproduce the granularity aspects of the transport. Comparisons with a quantum model based on continuum flow equations as in NanoMOS should provide valuable insight to better incorporate the quantum mechanical aspects in a practical particle-based model.
Original language | English (US) |
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Pages (from-to) | 39-43 |
Number of pages | 5 |
Journal | Journal of Computational Electronics |
Volume | 4 |
Issue number | 1-2 |
DOIs | |
State | Published - Apr 2005 |
Keywords
- Double-gate MOSFET
- Monte Carlo
- Quantum effects
- Velocity overshoot
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Modeling and Simulation
- Electrical and Electronic Engineering