@article{4f0d4aba7e184464b3fbdeb645a3e37c,
title = "Comparison of GaAsP solar cells on GaP and GaP/Si",
abstract = "We demonstrate metamorphic ∼1.7 eV GaAsxP1-x (x = 0.71 - 0.73) solar cells on high-quality GaP/Si templates and compare them to cells co-grown on bulk GaP. Both n+-emitter/p-base and p +-emitter/n-base polarities are explored. Cells with n-type bases demonstrate current-voltage characteristics that are similar to p-type base cells, but with blue-shifted peak quantum efficiencies. Threading dislocation densities for cells on GaP/Si were 0.92 - 1.3 × 107 cm -2, significantly lower than previous reports but higher than cells grown on bulk GaP. An open-circuit voltage of 1.12 V was obtained for a 1.71 eV cell on Si, leading to a promising bandgap-voltage offset of 0.59 V.",
author = "Lang, {Jordan R.} and Joseph Faucher and Stephanie Tomasulo and {Nay Yaung}, Kevin and {Larry Lee}, Minjoo",
note = "Funding Information: We gratefully acknowledge funding from the NSF CAREER program (Grant No. DMR-09559616). J.R.L was supported by a postdoctoral fellowship from the Yale Climate and Energy Institute. S.T. was supported by an award from the Department of Energy (DOE) Office of Science Graduate Fellowship Program (DOE SCGF), made possible in part by the American Recovery and Reinvestment Act of 2009, administered by ORISE-ORAU under Contract No. DE-AC05-06OR23100. All opinions expressed in this paper are the author's and do not necessarily reflect the policies and views of DOE, ORAU, or ORISE. K.N.Y. was supported by the Singapore Energy Innovation Programme Office for a National Research Foundation graduate fellowship. Microscopy and XRD facilities used in this work were supported by the Yale Institute for Nanoscience and Quantum Engineering and National Science Foundation MRSEC DMR 1119826. We are thankful to Dr. Bernardette Kunert (NASP GmbH) for providing the initial GaP/Si template samples. III/V",
year = "2013",
month = aug,
day = "26",
doi = "10.1063/1.4819456",
language = "English (US)",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",
}