Comparison of GaAsP solar cells on GaP and GaP/Si

Jordan R. Lang, Joseph Faucher, Stephanie Tomasulo, Kevin Nay Yaung, Minjoo Larry Lee

Research output: Contribution to journalArticlepeer-review


We demonstrate metamorphic ∼1.7 eV GaAsxP1-x (x = 0.71 - 0.73) solar cells on high-quality GaP/Si templates and compare them to cells co-grown on bulk GaP. Both n+-emitter/p-base and p +-emitter/n-base polarities are explored. Cells with n-type bases demonstrate current-voltage characteristics that are similar to p-type base cells, but with blue-shifted peak quantum efficiencies. Threading dislocation densities for cells on GaP/Si were 0.92 - 1.3 × 107 cm -2, significantly lower than previous reports but higher than cells grown on bulk GaP. An open-circuit voltage of 1.12 V was obtained for a 1.71 eV cell on Si, leading to a promising bandgap-voltage offset of 0.59 V.

Original languageEnglish (US)
Article number092102
JournalApplied Physics Letters
Issue number9
StatePublished - Aug 26 2013
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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