Comparison of fabrication approaches for selectively oxidized VCSEL arrays

K. M. Geib, K. D. Choquette, A. A. Allerman, R. D. Briggs, J. J. Hindi

Research output: Contribution to journalConference articlepeer-review

Abstract

The impressive performance improvements of laterally oxidized VCSELs come at the expense of increased fabrication complexity for 2-dimensional arrays. Since the epitaxial layers to be wet-thermally oxidized must be exposed, non-planarity can be an issue. This is particularly important in that electrical contact to both the anode and cathode of the diode must be brought out to a package. We have investigated four fabrication sequences suitable for the fabrication of 2-dimensional VCSEL arrays. These techniques include: mesa etched polymer planarized, mesa etched bridge contacted, mesa etched oxide isolated (where the electrical trace is isolated from the substrate during the oxidation) and oxide/implant isolation (oxidation through small via holes) all of which result in VCSELs with outstanding performance. The suitability of these processes for manufacturing are assessed relative to oxidation uniformity, device capacitance, and structural ruggedness for packaging.

Original languageEnglish (US)
Pages (from-to)36-40
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3946
StatePublished - Jan 1 2000
Externally publishedYes
EventVertical-Cavity Surface-Emitting Lasers IV - San Jose, CA, USA
Duration: Jan 26 2000Jan 28 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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