@inproceedings{d75d124d4f6f45b2911bfe495324e1f2,
title = "Comparison of 1.9 eV InGaP front- And rear-junction solar cells grown on Si",
abstract = "In this work, we compare the performance of front-junction (FJ) and rear-heterojunction (RHJ) 1.9 eV InGaP solar cells grown on Si by molecular beam epitaxy (MBE). The RHJs had greater Voc than the FJs on Si, even with 10 × higher threading dislocation density (TDD), indicating superior dislocation tolerance of the n-type absorber of the RHJ compared to the p-type absorber of the FJ. However, poor internal quantum efficiency (IQE) of the RHJ on Si due to insufficient diffusion length also limited cell efficiency. Based on modeling, a thinner RHJ absorber will greatly boost the short circuit current density (Jsc), enabling high-performance InGaP RHJs for epitaxial III-V/Si solar cells.",
keywords = "III-V/Si, InGaP, MBE, RHJ, rear hetero-junction",
author = "Li, \{Brian D.\} and Pankul Dhingra and Hool, \{Ryan D.\} and Shizhao Fan and Lee, \{Minjoo Larry\}",
note = "B.D.L and R.D.H. were supported by NASA Space Technology Research Fellowships under grant numbers 80NSSC19K1174 and 80NSSC18K1171, respectively.; 48th IEEE Photovoltaic Specialists Conference, PVSC 2021 ; Conference date: 20-06-2021 Through 25-06-2021",
year = "2021",
month = jun,
day = "20",
doi = "10.1109/PVSC43889.2021.9518584",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2614--2615",
booktitle = "2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021",
address = "United States",
}