Comparison between three-valley model and full band model in Monte Carlo simulation of bulk wurtzite GaN

Baozeng Guo, Yongqing Wang, Umberto Ravaioli, Maritin Staedele

Research output: Contribution to journalArticlepeer-review

Abstract

The Monte Carlo simulators with the three-valley model and the full band Monte Carlo model are used to explore electron transport in bulk wurtzite gallium nitride (GaN). Comparison of the results based on the two models is made. The results based on both models are basically the same at the lower field region, but exhibit some differences at the higher field region. The electron average energy exhibits obvious difference at the high field region between the two models. This difference further causes several other differences of GaN properties, such as the drift velocity versus field characteristics, the repopulation. Because of the complicated energy band structures at the high-energy region for wurtzite GaN, the analytical band structures in the three-valley model can not cover all properties of the band structures of wurtzite GaN, so the results based on the full band Monte Carlo model should be more exact.

Original languageEnglish (US)
Pages (from-to)113-119
Number of pages7
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume23
Issue number2
StatePublished - Feb 1 2002
Externally publishedYes

Keywords

  • Band structures
  • Monte Carlo simulation
  • Transport properties
  • Wurtzite GaN

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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