TY - GEN
T1 - Comparing FICDM and wafer-level CDM test methods
T2 - 34th International Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2012
AU - Jack, Nathan
AU - Rosenbaum, Elyse
PY - 2012
Y1 - 2012
N2 - The on-chip stresses induced by FICDM, WCDM2, CC-TLP, and VF-TLP are compared on the basis of voltage monitor readings and IC functional failures. In general, core circuit failures induced by FICDM are replicated on the wafer level. Package-related parasitics increase the FICDM current rise-time at an I/O pad relative to that measured externally, causing miscorrelation with wafer-level testers.
AB - The on-chip stresses induced by FICDM, WCDM2, CC-TLP, and VF-TLP are compared on the basis of voltage monitor readings and IC functional failures. In general, core circuit failures induced by FICDM are replicated on the wafer level. Package-related parasitics increase the FICDM current rise-time at an I/O pad relative to that measured externally, causing miscorrelation with wafer-level testers.
UR - http://www.scopus.com/inward/record.url?scp=84869775568&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84869775568&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84869775568
SN - 1585372188
SN - 9781585372188
T3 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings
BT - Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2012, EOS/ESD 2012
Y2 - 9 September 2012 through 14 September 2012
ER -