Comparative study of Ti/Al/Mo/Au, Mo/Al/Mo/Au, and V/Al/Mo/Au ohmic contacts to AlGaN/GaN heterostructures

Deepak Selvanathan, Fitih M. Mohammed, Asrat Tesfayesus, Ilesanmi Adesida

Research output: Contribution to journalArticle

Abstract

The Ti/Al/Mo/Au, Mo/Al/Mo/Au and V/Al/Mo/Au metallization methods were used to form ohmic contacts to AlGaN/GaN high electron mobility transistors (HEMT). Mo/Al/Mo/Au ohmic contacts were found to exhibit the lowest contact resistance of 0.22±0.02 ω mm over a range of anneal temperatures from 650 to 800 °C. Auger electron microscopy and x-ray diffraction measurements were used to investigate the intermetallic reactions. Ti/Al/Mo/Au metallization scheme exhibits the best thermal stability of the three metallization schemes.

Original languageEnglish (US)
Pages (from-to)2409-2416
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number5
DOIs
StatePublished - Sep 1 2004

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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