Comparative study of Ti/Al/Mo/Au, Mo/Al/Mo/Au, and V/Al/Mo/Au ohmic contacts to AlGaN/GaN heterostructures

Deepak Selvanathan; Fitih M. Mohammed; Asrat Tesfayesus; Ilesanmi Adesida

doi:10.1116/1.1798811

Comparative study of Ti/Al/Mo/Au, Mo/Al/Mo/Au, and V/Al/Mo/Au ohmic contacts to AlGaN/GaN heterostructures

Deepak Selvanathan, Fitih M. Mohammed, Asrat Tesfayesus, Ilesanmi Adesida

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Abstract

The Ti/Al/Mo/Au, Mo/Al/Mo/Au and V/Al/Mo/Au metallization methods were used to form ohmic contacts to AlGaN/GaN high electron mobility transistors (HEMT). Mo/Al/Mo/Au ohmic contacts were found to exhibit the lowest contact resistance of 0.22±0.02 ω mm over a range of anneal temperatures from 650 to 800 °C. Auger electron microscopy and x-ray diffraction measurements were used to investigate the intermetallic reactions. Ti/Al/Mo/Au metallization scheme exhibits the best thermal stability of the three metallization schemes.

Original language	English (US)
Pages (from-to)	2409-2416
Number of pages	8
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	5
DOIs	https://doi.org/10.1116/1.1798811
State	Published - Sep 2004

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1798811

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Comparative study of Ti/Al/Mo/Au, Mo/Al/Mo/Au, and V/Al/Mo/Au ohmic contacts to AlGaN/GaN heterostructures. / Selvanathan, Deepak; Mohammed, Fitih M.; Tesfayesus, Asrat et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 5, 09.2004, p. 2409-2416.

Research output: Contribution to journal › Article › peer-review

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abstract = "The Ti/Al/Mo/Au, Mo/Al/Mo/Au and V/Al/Mo/Au metallization methods were used to form ohmic contacts to AlGaN/GaN high electron mobility transistors (HEMT). Mo/Al/Mo/Au ohmic contacts were found to exhibit the lowest contact resistance of 0.22±0.02 ω mm over a range of anneal temperatures from 650 to 800 °C. Auger electron microscopy and x-ray diffraction measurements were used to investigate the intermetallic reactions. Ti/Al/Mo/Au metallization scheme exhibits the best thermal stability of the three metallization schemes.",

author = "Deepak Selvanathan and Mohammed, {Fitih M.} and Asrat Tesfayesus and Ilesanmi Adesida",

note = "Funding Information: This work was supported by ONR Grant N00014-01-1-1000 and N00014-01-1-1072 (Monitor: H. Dietrich). Parts of this work were carried out in the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439.",

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AU - Mohammed, Fitih M.

AU - Tesfayesus, Asrat

AU - Adesida, Ilesanmi

N1 - Funding Information: This work was supported by ONR Grant N00014-01-1-1000 and N00014-01-1-1072 (Monitor: H. Dietrich). Parts of this work were carried out in the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439.

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N2 - The Ti/Al/Mo/Au, Mo/Al/Mo/Au and V/Al/Mo/Au metallization methods were used to form ohmic contacts to AlGaN/GaN high electron mobility transistors (HEMT). Mo/Al/Mo/Au ohmic contacts were found to exhibit the lowest contact resistance of 0.22±0.02 ω mm over a range of anneal temperatures from 650 to 800 °C. Auger electron microscopy and x-ray diffraction measurements were used to investigate the intermetallic reactions. Ti/Al/Mo/Au metallization scheme exhibits the best thermal stability of the three metallization schemes.

AB - The Ti/Al/Mo/Au, Mo/Al/Mo/Au and V/Al/Mo/Au metallization methods were used to form ohmic contacts to AlGaN/GaN high electron mobility transistors (HEMT). Mo/Al/Mo/Au ohmic contacts were found to exhibit the lowest contact resistance of 0.22±0.02 ω mm over a range of anneal temperatures from 650 to 800 °C. Auger electron microscopy and x-ray diffraction measurements were used to investigate the intermetallic reactions. Ti/Al/Mo/Au metallization scheme exhibits the best thermal stability of the three metallization schemes.

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Comparative study of Ti/Al/Mo/Au, Mo/Al/Mo/Au, and V/Al/Mo/Au ohmic contacts to AlGaN/GaN heterostructures

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