The Ti/Al/Mo/Au, Mo/Al/Mo/Au and V/Al/Mo/Au metallization methods were used to form ohmic contacts to AlGaN/GaN high electron mobility transistors (HEMT). Mo/Al/Mo/Au ohmic contacts were found to exhibit the lowest contact resistance of 0.22±0.02 ω mm over a range of anneal temperatures from 650 to 800 °C. Auger electron microscopy and x-ray diffraction measurements were used to investigate the intermetallic reactions. Ti/Al/Mo/Au metallization scheme exhibits the best thermal stability of the three metallization schemes.
|Original language||English (US)|
|Number of pages||8|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Sep 1 2004|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering