A comparative study of integrated photoreceivers using MSM/HEMT and PIN/HEMT technologies

P. Fay, W. Wohlmuth, A. Mahajan, C. Caneau, S. Chandrasekhar, I. Adesida

Research output: Contribution to journalReview articlepeer-review


An experimental comparative study of PIN/HEMT and MSM/HEMT monolithically integrated photoreceivers for high-speed long-wavelength telecommunications systems is presented. The monolithic integration of the photodetector (either MSM or PIN) with the HEMT used a stacked layer structure design grown by OMVPE. Detector areas and amplifier feedback resistances were selected to result in similar bandwidths and responsivities for both the MSM-and PIN-based photoreceivers. Sensitivities for the MSM/HEMT photoreceivers were measured to be -16.9 dBm and -10.7 dBm at 5 Gb/s and 10 Gb/s, respectively for a bit-error ratio (BER) of 10-9 and 27 -1 pattern length PRBS data. Correspondingperformance for the PIN/HEMT photoreceivers was -18.4 and -15.8 dBm. To the author's knowledge, this is the first direct experimental comparison of MSM- and PIN-based technologies for high-speed monolithic photoreceiver applications.

Original languageEnglish (US)
Pages (from-to)582-584
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number3
StatePublished - Mar 1998


  • MSM photodetectors
  • Optoelectronic integrated circuits
  • Photoreceiver noise
  • Photoreceivers
  • Pin photodiodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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