Comparative fluctuation microscopy study of medium-range order in hydrogenated amorphous silicon deposited by various methods

P. M. Voyles, M. M.J. Treacy, H. C. Jin, J. R. Abelson, J. M. Gibson, J. Yang, S. Guha, R. S. Crandall

Research output: Contribution to journalArticlepeer-review

Abstract

We have characterized by fluctuation electron microscopy the medium-range order of hydrogenated amorphous silicon thin films deposited by a variety of methods. Films were deposited by reactive magnetron sputtering, hot-wire chemical vapor deposition, and plasma enhanced chemical vapor deposition with and without H2 dilution of the SiH4 precursor gas. All of the films show the signature of the paracrystalline structure typical of amorphous Si. There are small variations in the degree of medium-range order with deposition method and H content. The PECVD film grown with high H2 dilution contains Si crystals ∼5 nm in diameter at a density of ∼109 cm-2. The amorphous matrix surrounding these crystals shows no difference in medium-range order from the standard PECVD film. This supports explanations of the resistance of the H-dilution material to light-induced degradation that depend only on the presence of crystalline grains without modifications of the amorphous matrix.

Original languageEnglish (US)
Pages (from-to)A241-A246
JournalMaterials Research Society Symposium - Proceedings
Volume609
DOIs
StatePublished - 2000

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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