@inproceedings{68ed0f528aa140348aef2f8ab0a6ef42,
title = "Compact modeling of vertical ESD protection NPN transistors for RF circuits",
abstract = "We present an easy-to-use, simulator-independent compact model of a vertical npn transistor suitable for ESD circuit simulation. In addition to including high-current and breakdown effects, we also model accurately the small-signal off-state impedance of the device using s-parameter measurements, for inclusion in RF circuit simulations. Experimental results are provided for silicon and SiGe npn transistors.",
keywords = "Circuit simulation, Computational modeling, Computer simulation, Electric breakdown, Electrostatic discharge, Hardware design languages, Impedance, Protection, Radio frequency, Virtual colonoscopy",
author = "Sopan Joshi and Elyse Rosenbaum",
note = "Publisher Copyright: {\textcopyright} 2002 ESDA.; 24th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2002 ; Conference date: 06-10-2002 Through 10-10-2002",
year = "2002",
language = "English (US)",
series = "Electrical Overstress/Electrostatic Discharge Symposium Proceedings",
publisher = "ESD Association",
pages = "292--298",
booktitle = "Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2002 - Proceedings",
}