Compact modeling of on-chip ESD protection devices using Verilog-A

Junjun Li; Sopan Joshi; Ryan Barnes; Elyse Rosenbaum

doi:10.1109/tcad.2005.855948

Compact modeling of on-chip ESD protection devices using Verilog-A

Junjun Li, Sopan Joshi, Ryan Barnes, Elyse Rosenbaum

Research output: Contribution to journal › Article › peer-review

Abstract

A practical approach for the compact modeling of electrostatic discharge (ESD) protection devices, using the behavioral language Verilog-A, is presented. Models of the NMOS transistor, the vertical n-p-n transistor, the diode, and the resistor have been developed, suitable for circuit-level simulation. Large-signal and small-signal models are provided for transient and alternating current (ac) simulation, respectively. A self-heating model is included for accurate simulation of the device ON-resistance under transient high-current conditions.

Original language	English (US)
Pages (from-to)	1047-1063
Number of pages	17
Journal	IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume	25
Issue number	6
DOIs	https://doi.org/10.1109/tcad.2005.855948
State	Published - Jun 2006

Keywords

Electrostatic discharge (ESD)
Metal-oxide-semiconductor (MOS) model
Reliability
Verilog-A

ASJC Scopus subject areas

Software
Computer Graphics and Computer-Aided Design
Electrical and Electronic Engineering

Online availability

10.1109/tcad.2005.855948

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Cite this

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title = "Compact modeling of on-chip ESD protection devices using Verilog-A",

abstract = "A practical approach for the compact modeling of electrostatic discharge (ESD) protection devices, using the behavioral language Verilog-A, is presented. Models of the NMOS transistor, the vertical n-p-n transistor, the diode, and the resistor have been developed, suitable for circuit-level simulation. Large-signal and small-signal models are provided for transient and alternating current (ac) simulation, respectively. A self-heating model is included for accurate simulation of the device ON-resistance under transient high-current conditions.",

keywords = "Electrostatic discharge (ESD), Metal-oxide-semiconductor (MOS) model, Reliability, Verilog-A",

author = "Junjun Li and Sopan Joshi and Ryan Barnes and Elyse Rosenbaum",

note = "Funding Information: Manuscript received December 9, 2004; revised March 25, 2005. This work was supported by the Semiconductor Research Corporation. This paper was recommended by Associate Editor H. Kosma.",

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AU - Li, Junjun

AU - Joshi, Sopan

AU - Barnes, Ryan

AU - Rosenbaum, Elyse

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PY - 2006/6

Y1 - 2006/6

N2 - A practical approach for the compact modeling of electrostatic discharge (ESD) protection devices, using the behavioral language Verilog-A, is presented. Models of the NMOS transistor, the vertical n-p-n transistor, the diode, and the resistor have been developed, suitable for circuit-level simulation. Large-signal and small-signal models are provided for transient and alternating current (ac) simulation, respectively. A self-heating model is included for accurate simulation of the device ON-resistance under transient high-current conditions.

AB - A practical approach for the compact modeling of electrostatic discharge (ESD) protection devices, using the behavioral language Verilog-A, is presented. Models of the NMOS transistor, the vertical n-p-n transistor, the diode, and the resistor have been developed, suitable for circuit-level simulation. Large-signal and small-signal models are provided for transient and alternating current (ac) simulation, respectively. A self-heating model is included for accurate simulation of the device ON-resistance under transient high-current conditions.

KW - Electrostatic discharge (ESD)

KW - Metal-oxide-semiconductor (MOS) model

KW - Reliability

KW - Verilog-A

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Compact modeling of on-chip ESD protection devices using Verilog-A

Abstract

Keywords

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