Compact modeling of gate leakage phenomenon in GaN HEMTs

Kexin Li, Eiji Yagyu, Hisashi Saito, Koon Hoo Teo, Shaloo Rakheja

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper implements a physically derived compact model of current conduction and gate leakage in AlGaN/GaN high-electron mobility transistors (HEMTs). The drain-source current conduction through the device is described using the surface potential based virtual-source model applicable for scaled gate length devices. The gate leakage model includes contributions from thermal emission (TE), trap-assisted tunneling (TAT), Poole Frenkel (PF) emission, and Fowler-Nordheim (FN) tunneling. The full I-V model is applied to fabricated AlGaN/GaN HEMTs with SiN passivation and excellent agreement of the model against measured data is demonstrated over a broad bias and temperature range from 298 K to 573 K.

Original languageEnglish (US)
Title of host publication2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages225-228
Number of pages4
ISBN (Electronic)9784863487635
DOIs
StatePublished - Sep 23 2020
Event2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 - Virtual, Kobe, Japan
Duration: Sep 3 2020Oct 6 2020

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2020-September

Conference

Conference2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
CountryJapan
CityVirtual, Kobe
Period9/3/2010/6/20

Keywords

  • Compact model
  • GaN HEMTs
  • Gate leakage
  • High temperature operation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modeling and Simulation

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