Compact distributed multi-finger MOSFET model for circuit-level ESD simulation

Kuo hsuan Meng, Zaichen Chen, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

This work presents a model for multi-finger MOSFETs operating under ESD conditions. It is a distributed model that can reproduce the effect of layout geometry on trigger voltage, on-state resistance, and non-uniform turn-on of device fingers. A three-terminal transmission line pulsing technique enables model parameter extraction. Analysis of measurement data and TCAD simulation reveals that self-heating is not uniform across the device, and this affects the relation between on-state resistance and the number of fingers. With self-heating incorporated, the model correctly reproduces the device I–V curve up to high current levels.

Original languageEnglish (US)
Pages (from-to)11-21
Number of pages11
JournalMicroelectronics Reliability
Volume63
DOIs
StatePublished - Aug 1 2016

Keywords

  • Circuit-level ESD simulation
  • Compact model
  • ESD
  • MOSFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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