Column III-column V sublattice interaction via Zn and Si impurity-induced layer disordering of 13C-doped AlxGa 1-xAs-GaAs superlattices

L. J. Guido, J. S. Major, J. E. Baker, N. Holonyak, B. T. Cunningham, G. E. Stillman

Research output: Contribution to journalArticle

Abstract

Experiments are described employing secondary-ion mass spectroscopy (SIMS) to study the stability of 13C-doped Al 0.5Ga0.5As-GaAs superlattices against Zn and Si impurity-induced layer disordering (IILD). The modulation depth of the SIMS 27Al and 13C signals is used as a sensitive probe of column III and column V sublattice interdiffusion. The data show that CAs is much more stable against Zn and Si IILD than the column III superlattice host crystal itself. The minor enhancement of C As diffusion via the column III disordering agents, which is present to a significant extent for Si IILD but almost nonexistent for Zn IILD, suggests that there is no direct interchange of column III and column V sublattice atoms. The Zn and Si enhancement of carbon diffusion is probably caused by local Coulombic interaction between the diffusing Zn+i and Si+III species and the C-As acceptor.

Original languageEnglish (US)
Pages (from-to)572-574
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number6
DOIs
StatePublished - Dec 1 1990

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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