Experiments are described employing secondary-ion mass spectroscopy (SIMS) to study the stability of 13C-doped Al 0.5Ga0.5As-GaAs superlattices against Zn and Si impurity-induced layer disordering (IILD). The modulation depth of the SIMS 27Al and 13C signals is used as a sensitive probe of column III and column V sublattice interdiffusion. The data show that CAs is much more stable against Zn and Si IILD than the column III superlattice host crystal itself. The minor enhancement of C As diffusion via the column III disordering agents, which is present to a significant extent for Si IILD but almost nonexistent for Zn IILD, suggests that there is no direct interchange of column III and column V sublattice atoms. The Zn and Si enhancement of carbon diffusion is probably caused by local Coulombic interaction between the diffusing Zn+i and Si+III species and the C-As acceptor.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)