Column III-column V sublattice interaction via Zn and Si impurity-induced layer disordering of 13C-doped AlxGa 1-xAs-GaAs superlattices

L. J. Guido, J. S. Major, J. E. Baker, N. Holonyak, B. T. Cunningham, G. E. Stillman

Research output: Contribution to journalArticle

Abstract

Experiments are described employing secondary-ion mass spectroscopy (SIMS) to study the stability of 13C-doped Al 0.5Ga0.5As-GaAs superlattices against Zn and Si impurity-induced layer disordering (IILD). The modulation depth of the SIMS 27Al and 13C signals is used as a sensitive probe of column III and column V sublattice interdiffusion. The data show that CAs is much more stable against Zn and Si IILD than the column III superlattice host crystal itself. The minor enhancement of C As diffusion via the column III disordering agents, which is present to a significant extent for Si IILD but almost nonexistent for Zn IILD, suggests that there is no direct interchange of column III and column V sublattice atoms. The Zn and Si enhancement of carbon diffusion is probably caused by local Coulombic interaction between the diffusing Zn+i and Si+III species and the C-As acceptor.

Original languageEnglish (US)
Pages (from-to)572-574
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number6
DOIs
StatePublished - Dec 1 1990

Fingerprint

sublattices
superlattices
impurities
interactions
mass spectroscopy
augmentation
ions
modulation
probes
carbon
crystals
atoms

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Column III-column V sublattice interaction via Zn and Si impurity-induced layer disordering of 13C-doped AlxGa 1-xAs-GaAs superlattices. / Guido, L. J.; Major, J. S.; Baker, J. E.; Holonyak, N.; Cunningham, B. T.; Stillman, G. E.

In: Applied Physics Letters, Vol. 56, No. 6, 01.12.1990, p. 572-574.

Research output: Contribution to journalArticle

Guido, L. J. ; Major, J. S. ; Baker, J. E. ; Holonyak, N. ; Cunningham, B. T. ; Stillman, G. E. / Column III-column V sublattice interaction via Zn and Si impurity-induced layer disordering of 13C-doped AlxGa 1-xAs-GaAs superlattices. In: Applied Physics Letters. 1990 ; Vol. 56, No. 6. pp. 572-574.
@article{bc9b4be20a9d4c238d384008ebb74d53,
title = "Column III-column V sublattice interaction via Zn and Si impurity-induced layer disordering of 13C-doped AlxGa 1-xAs-GaAs superlattices",
abstract = "Experiments are described employing secondary-ion mass spectroscopy (SIMS) to study the stability of 13C-doped Al 0.5Ga0.5As-GaAs superlattices against Zn and Si impurity-induced layer disordering (IILD). The modulation depth of the SIMS 27Al and 13C signals is used as a sensitive probe of column III and column V sublattice interdiffusion. The data show that CAs is much more stable against Zn and Si IILD than the column III superlattice host crystal itself. The minor enhancement of C As diffusion via the column III disordering agents, which is present to a significant extent for Si IILD but almost nonexistent for Zn IILD, suggests that there is no direct interchange of column III and column V sublattice atoms. The Zn and Si enhancement of carbon diffusion is probably caused by local Coulombic interaction between the diffusing Zn+i and Si+III species and the C-As acceptor.",
author = "Guido, {L. J.} and Major, {J. S.} and Baker, {J. E.} and N. Holonyak and Cunningham, {B. T.} and Stillman, {G. E.}",
year = "1990",
month = "12",
day = "1",
doi = "10.1063/1.102748",
language = "English (US)",
volume = "56",
pages = "572--574",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Column III-column V sublattice interaction via Zn and Si impurity-induced layer disordering of 13C-doped AlxGa 1-xAs-GaAs superlattices

AU - Guido, L. J.

AU - Major, J. S.

AU - Baker, J. E.

AU - Holonyak, N.

AU - Cunningham, B. T.

AU - Stillman, G. E.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - Experiments are described employing secondary-ion mass spectroscopy (SIMS) to study the stability of 13C-doped Al 0.5Ga0.5As-GaAs superlattices against Zn and Si impurity-induced layer disordering (IILD). The modulation depth of the SIMS 27Al and 13C signals is used as a sensitive probe of column III and column V sublattice interdiffusion. The data show that CAs is much more stable against Zn and Si IILD than the column III superlattice host crystal itself. The minor enhancement of C As diffusion via the column III disordering agents, which is present to a significant extent for Si IILD but almost nonexistent for Zn IILD, suggests that there is no direct interchange of column III and column V sublattice atoms. The Zn and Si enhancement of carbon diffusion is probably caused by local Coulombic interaction between the diffusing Zn+i and Si+III species and the C-As acceptor.

AB - Experiments are described employing secondary-ion mass spectroscopy (SIMS) to study the stability of 13C-doped Al 0.5Ga0.5As-GaAs superlattices against Zn and Si impurity-induced layer disordering (IILD). The modulation depth of the SIMS 27Al and 13C signals is used as a sensitive probe of column III and column V sublattice interdiffusion. The data show that CAs is much more stable against Zn and Si IILD than the column III superlattice host crystal itself. The minor enhancement of C As diffusion via the column III disordering agents, which is present to a significant extent for Si IILD but almost nonexistent for Zn IILD, suggests that there is no direct interchange of column III and column V sublattice atoms. The Zn and Si enhancement of carbon diffusion is probably caused by local Coulombic interaction between the diffusing Zn+i and Si+III species and the C-As acceptor.

UR - http://www.scopus.com/inward/record.url?scp=36549096678&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36549096678&partnerID=8YFLogxK

U2 - 10.1063/1.102748

DO - 10.1063/1.102748

M3 - Article

AN - SCOPUS:36549096678

VL - 56

SP - 572

EP - 574

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

ER -