Collector optic in-situ Sn removal using hydrogen plasma

John R. Sporre, Dan Elg, David N Ruzic, Shailendra N. Srivastava, Igor V. Fomenkov, David C. Brandt

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The presence of Sn on the collector optic of an extreme ultraviolet (EUV) light lithography tool continues to be a concern for source manufacturers. A mere nanometers deposition results in reduction of EUV light reflectivity to unacceptable levels. It has been shown previously that hydrogen radical etching of Sn provides a promising technique for in-situ cleaning of the collector optic. One concern in this technique is the redeposition by radicalized SnH4 breaking apart after making contact with a surface. To address this concern, large scale etching measurements were made using a metallic antenna as the substrate. Optimized etch rates approaching 7.5±1 nm/min have been achieved with a flow rate of 500 sccm at a pressure of 80 mTorr. The effect of variations in the Sn cleaning environment will be investigated with respect to temperature increases as well as air, oxygen, and methane contamination gasses. Furthermore, the effect of Sn located away from the cleaning location will also be presented.

Original languageEnglish (US)
Title of host publicationExtreme Ultraviolet (EUV) Lithography IV
DOIs
StatePublished - Jun 5 2013
EventExtreme Ultraviolet (EUV) Lithography IV - San Jose, CA, United States
Duration: Feb 25 2013Feb 28 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8679
ISSN (Print)0277-786X

Other

OtherExtreme Ultraviolet (EUV) Lithography IV
CountryUnited States
CitySan Jose, CA
Period2/25/132/28/13

Fingerprint

Cleaning
hydrogen plasma
accumulators
cleaning
Hydrogen
Optics
Plasma
optics
Etching
Plasmas
Ultraviolet
ultraviolet radiation
Extremes
etching
Methane
Reflectivity
Contamination
Lithography
Flow Rate
Antenna

Keywords

  • Collector
  • Contamination
  • EUV
  • Hydrogen
  • Plasma
  • Sn cleaning

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Sporre, J. R., Elg, D., Ruzic, D. N., Srivastava, S. N., Fomenkov, I. V., & Brandt, D. C. (2013). Collector optic in-situ Sn removal using hydrogen plasma. In Extreme Ultraviolet (EUV) Lithography IV [86792H] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8679). https://doi.org/10.1117/12.2012584

Collector optic in-situ Sn removal using hydrogen plasma. / Sporre, John R.; Elg, Dan; Ruzic, David N; Srivastava, Shailendra N.; Fomenkov, Igor V.; Brandt, David C.

Extreme Ultraviolet (EUV) Lithography IV. 2013. 86792H (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8679).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sporre, JR, Elg, D, Ruzic, DN, Srivastava, SN, Fomenkov, IV & Brandt, DC 2013, Collector optic in-situ Sn removal using hydrogen plasma. in Extreme Ultraviolet (EUV) Lithography IV., 86792H, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8679, Extreme Ultraviolet (EUV) Lithography IV, San Jose, CA, United States, 2/25/13. https://doi.org/10.1117/12.2012584
Sporre JR, Elg D, Ruzic DN, Srivastava SN, Fomenkov IV, Brandt DC. Collector optic in-situ Sn removal using hydrogen plasma. In Extreme Ultraviolet (EUV) Lithography IV. 2013. 86792H. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2012584
Sporre, John R. ; Elg, Dan ; Ruzic, David N ; Srivastava, Shailendra N. ; Fomenkov, Igor V. ; Brandt, David C. / Collector optic in-situ Sn removal using hydrogen plasma. Extreme Ultraviolet (EUV) Lithography IV. 2013. (Proceedings of SPIE - The International Society for Optical Engineering).
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